Measuring the temperature of a mesoscopic electron system by means of single electron statistics

Prati, Enrico; Belli, Matteo; Fanciulli, Marco; Ferrari, Giorgio
March 2010
Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p113109
Academic Journal
We measure the temperature of a mesoscopic system consisting of an ultradilute two-dimensional electron gas at the Si/SiO2 interface in a metal-oxide-semiconductor field effect transistor (MOSFET) by means of the capture and emission of an electron in a point defect close to the interface. We show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical ensemble applies, the time domain charge fluctuation in the defect is used to define the temperature of the few electron gas in the channel.


Related Articles

  • Thermoelectric properties of the interacting two dimensional electron gas in the diffusion regime? Dolgopolov, V.; Gold, A. // JETP Letters;Nov2011, Vol. 94 Issue 6, p446 

    We demonstrate that kinetic coefficients related to thermoelectric properties of the two dimensional electron gas in the diffusive regime are strongly influenced by electron-electron interaction. As an example we consider the thermoelectric coefficients of the diluted two-dimensional electron...

  • Thermal Correction to Resistivity in Dilute Si-MOSFET Two-Dimensional Systems. Cheremisin, M. V. // Journal of Experimental & Theoretical Physics;Mar2005, Vol. 100 Issue 3, p597 

    Neglecting electron–electron interactions and quantum interference effects, we calculate the classical resistivity of a two-dimensional electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is...

  • Zero field Wigner crystal. Chitra, R.; Giamarchi, T. // European Physical Journal B -- Condensed Matter;Apr2005, Vol. 44 Issue 4, p455 

    A candidate for the insulating phase of the 2D electron gas, seen in high mobility 2D MOSFETS and heterojunctions, is a Wigner crystal pinned by the incipient disorder. With this in view, we study the effect of collective pinning on the physical properties of the crystal formed in zero external...

  • Random Telegraph Signal In Si n-MOSFETs: A Way Towards Single Spin Resonance Detection. Fanciulli, Marco; Prati, Enrico; Ferrari, Giorgio; Sampietro, Marco // AIP Conference Proceedings;2005, Vol. 800 Issue 1, p125 

    Single spin detection is one of the most challenging tasks towards the realization of a solid-state-based quantum information processor. Spin-dependent (SD) processes in the random telegraph signal (RTS) observed in silicon MOSFETs may lead to quantum bit read-out. In addition, if successful,...

  • Multicomponent Dense Electron Gas as a Model of Si MOSFET. Iordanski, S. V.; Kashuba, A. // JETP Letters;11/10/2002, Vol. 76 Issue 9, p563 

    We solve a 2D model of N-component dense electron gas in the limit N→∞ and in the range of the Coulomb interaction parameter N[sup –3/2]

  • An Explicit Surface-Potential Based Biaxial Strained-Sin-MOSFET Model for Circuit Simulation. Maiti, Tapas K.; Banerjee, Animesh; Maiti, Chinmay K. // Engineering;Nov2010, Vol. 2 Issue 11, p879 

    In this paper, a charge sheet surface potential based model for strained-Si nMOSFETs is presented and validated with numerical simulation. The model considers sub band splitting in the 2-DEG at the top heterointerface in SiGe layer and also the dependence of electron concentration at...

  • Threshold energies of high-field-induced hole currents and positive charges in SiO2 layers of metal-oxide-semiconductor structures. Gao, Xiaoping; Yee, Sinclair S. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5795 

    Describes a study which examined the threshold energies of high-field induced oxide hole currents and positive oxide charges using metal-oxide-semiconductor field-effect transistors. Experimental details; Results and discussion; Conclusions.

  • Multiferroic oxides-based flash memory and spin-field-effect transistor. Chenglong Jia; Berakdar, Jamal // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012105 

    We propose a modified spin-field-effect transistor fabricated in a two dimensional electron gas (2DEG) formed at the surface of multiferroic oxides with a transverse helical magnetic order. The topology of the oxide local magnetic moments induces a resonant momentum-dependent effective...

  • The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET. Yang, Fan; Yao, Yao; He, Zhiyuan; Zhou, Guilin; Zheng, Yue; He, Liang; Zhang, Jincheng; Ni, Yiqiang; Zhou, Deqiu; Shen, Zhen; Zhong, Jian; Wu, Zhisheng; Zhang, Baijun; Liu, Yang // Journal of Materials Science: Materials in Electronics;Dec2015, Vol. 26 Issue 12, p9753 

    In this paper, the selective area growth (SAG) technique is used to regrow thin AlGaN/GaN heterostructure on access region for realizing trench gate normally-off AlGaN/GaN MOSFET. Heavy background doping is found in SAG AlGaN/GaN heterostructure, which is not expected for its degradation on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics