TITLE

Effect of the metal-semiconductor phase transition on the rate of hydrogen penetration into vanadium dioxide thin films

AUTHOR(S)
Andreev, V. N.; Klimov, V. A.
PUB. DATE
March 2010
SOURCE
Physics of the Solid State;Mar2010, Vol. 52 Issue 3, p605
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The rates of hydrogen penetration from an aqueous solution of glycerin into thin films of vanadium dioxide in different phases have been compared. It has been found that the rate of hydrogen penetration into the metal phase of vanadium dioxide is at least one order of magnitude higher than that of hydrogen penetration into the semiconductor phase at the same temperature.
ACCESSION #
48645409

 

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