TITLE

Strong optical transitions via surface states on Si(001)2×1:H ultrathin films: A theoretical study

AUTHOR(S)
Nishida, Masahiko
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/30/2001, Vol. 79 Issue 5
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optical transitions via localized surface states on Si(001) ultrathin films terminated by monohydride dimers on both surfaces with 2×1 periodicity are studied by use of the extended Hu¨ckel-type nonorthogonal tight-binding method. The calculated oscillator strength between the bottom of the empty surface states and the valence-band maximum is much larger than that for direct band-to-band transitions in films with an ideal dihydride termination on both surfaces. An analysis shows that this strong optical coupling is attributed to a significant s-like character introduced into the surface-state bottom by the formation of the monohydride dimers on the film surface. © 2001 American Institute of Physics.
ACCESSION #
4864285

 

Related Articles

  • Growth and characterization of hydrogenated amorphous silicon thin films from SiH[sub 2] radical precursor: Atomic-scale analysis. Sriraman, Saravanapriyan; Aydil, Eray S.; Maroudas, Dimitrios // Journal of Applied Physics;2/15/2004, Vol. 95 Issue 4, p1792 

    Molecular-dynamics (MD) simulations of hydrogenated amorphous silicon (a-Si:H) film growth on an initially H-terminated Si(001)-(2×1) substrate at T=500 K was studied through repeated impingement of SiH[sub 2] radicals to elucidate the effects of this species on the structural quality of the...

  • Spectroscopic properties of conducting Langmuir–Blodgett films obtained by the ‘‘homodoping strategy’’. Yartsev, V. M.; Bourgoin, J. P.; Delhaes, P.; Vandevyver, M.; Barraud, A. // Journal of Chemical Physics;8/15/1993, Vol. 99 Issue 4, p3092 

    Experimental IR properties of conducting (ODS-TCNQ)ξ(TCNQC18)1-ξ Langmuir–Blodgett (LB) films are presented and discussed within the frame of the electron-vibration coupling model of Rice, extended to take into account the modifications induced by grafting an alkyl chain to the TCNQ...

  • Determination of the optimal cation composition of ferroelectric (Zn[sub x]Cd[sub 1-x])S thin films for applications to silicon-based nonvolatile memories. Hotta, Y.; Rokuta, E.; Jhoi, J.-H.; Tabata, H.; Kobayashi, H.; Kawai, T. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3180 

    Thin films of ferroelectric binary mixed II–VI compounds such as (Zn[sub x]Cd[sub 1-x])S, as well as (Zn[sub y]Cd[sub 1-y])Te and (Zn[sub z]Cd[sub 1-z])Se (0≤x,y,z≤1), were examined from the standpoint of the application to Si-based nonvolatile memories. Electronic-band...

  • Chemical etching for the evaluation of hydrogenated amorphous silicon films. Chu, T. L.; Chu, Shirley S. // Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1783 

    Chemical etching using a 1:5:40 HF-HNO3-CH3COOH solution has been used for the evaluation of hydrogenated amorphous silicon (a-Si:H) films. The dissolution rate of a-Si[ATOTHER]@B:[/ATOTHER] H films and the structural features brought out by etching have revealed significant differences in the...

  • Observation of, and bias-dependent annealing of, a paramagnetic defect possibly unique to thermally grown SiO2. Carlos, W. E. // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1767 

    The observation of a variant of the Si E’ center which is possibly unique to thin films of SiO2 is reported. This center which has not been reported for bulk a-SiO2 is detected after x irradiation of films grown on (111) and (100) wafers of silicon. The center contains two threefold...

  • Interface structures in beta-silicon carbide thin films. Nutt, Steven R.; Smith, David J.; Kim, H. J.; Davis, Robert F. // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p203 

    Interface structures in monocrystalline beta-silicon carbide thin films grown on (001) silicon substrates have been studied by high-resolution electron microscopy of cross-sectional specimens. Despite a large lattice mismatch, there is a periodic registry of {111} atom planes across the SiC-Si...

  • Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films. Schwarz, R.; Kolodzey, J. S.; Wagner, S.; Kouzes, R. T. // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p188 

    Depth profiles of various constituents and impurities of thin films were obtained simultaneously by a nuclear coincidence method. The energy spectrum of elastically scattered 12 MeV protons, measured by a high-resolution magnetic spectrometer, was used for constituent identification and total...

  • Chemically etched micromirrors in silicon. Kendall, D. L.; de Guel, G. R.; Guel-Sandoval, S.; Garcia, E. J.; Allen, T. A. // Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p836 

    Purposely introduced pinholes can be processed so as to produce nearly spherical or paraboloidal depressions in (100) silicon by a two-step chemical etching procedure in KOH:water solutions. Regular arrays of f/1–f/10 specularly reflecting micromirrors can be fabricated.

  • Free-carrier and temperature effects in amorphous silicon thin films. Tanguy, C.; Hulin, D.; Mourchid, A.; Fauchet, P. M.; Wagner, S. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p880 

    The electronic and thermal contributions to photoinduced changes in the optical properties of hydrogenated amorphous silicon (a-Si:H) films can be distinguished in pump-probe experiments by an appropriate choice of the probe wavelength. Intraband absorption decreases strongly with carrier...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics