TITLE

Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate

AUTHOR(S)

Yamada, A.; Fons, P. J.; Hunger, R.; Iwata, K.; Matsubara, K.; Niki, S.

PUB. DATE

July 2001

SOURCE

Applied Physics Letters;7/30/2001, Vol. 79 Issue 5

SOURCE TYPE

Academic Journal

DOC. TYPE

Article

ABSTRACT

The interface construction of tilt growth that is sometimes observed for epilayer growth on a lattice mismatched substrate is modeled on the basis that tilt relieves misfit strain in the epilayer. In this model off-axis misfit accommodation is assumed to be due to only tilt dislocations or tilt dislocations combined with misfit dislocations. The average interval between successive dislocations which are formed along the interface can be estimated using the lattice units of both materials and that of the epilayer in another principal axis direction; the tilt angle can also be calculated geometrically. The tilt angle predicted by this model agrees well with experimental results for several examples of mismatched epilayer growth by molecular-beam epitaxy. The model suggests a method to grow a single domain of stress-free epilayer by using a substrate cut to an angle that allows off-axis fit to the lattice unit of the epilayer. © 2001 American Institute of Physics.

ACCESSION #

4864279

 

Related Articles

• A Lattice Model for the Line Tension of a Sessile Drop. Gandolfo, Daniel; Laanait, Lahoussine; Miracle-Sole, Salvador; Ruiz, Jean // Journal of Statistical Physics;Jan2007, Vol. 126 Issue 1, p133 

  Within a semi-infinite three-dimensional lattice gas model describing the coexistence of two phases on a substrate, we study, by cluster expansion techniques, the free energy (line tension) associated with the contact line between the two phases and the substrate. We show that this line tension,...

• Structural study of (CdS/ZnSe)/BeTe superlattices for λ=1.55 μm intersubband transition. Li, B.S.; Akimoto, R.; Akita, K.; Hasama, H. // Journal of Applied Physics;5/15/2004, Vol. 95 Issue 10, p5352 

  A (CdS/ZnSe)/BeTe superlattice (SL), based on wide band gap II-VI compounds, with a large band offset of 3.1 eV was grown on a GaAs (001) substrate using molecular-beam epitaxy and an intersubband transition (ISB-T) of 0.78 eV (λ 1.58µ m) with a full width at half maximum (FWHM) of 96 meV...

• Direct growth of graphitic carbon on Si(111). Thanh Trung, Pham; Joucken, Frédéric; Campos-Delgado, Jessica; Raskin, Jean-Pierre; Hackens, Benoı⁁t; Sporken, Robert // Applied Physics Letters;1/7/2013, Vol. 102 Issue 1, p013118 

  Appropriate conditions for direct growth of graphitic films on Si(111) 7 × 7 are investigated. The structural and electronic properties of the samples are studied by Auger electron spectroscopy, X-ray photoemission spectroscopy, low energy electron diffraction (LEED), Raman spectroscopy, and...

• Structure Transformation and Coherent Interface in Large Lattice-Mismatched Nanoscale Multilayers. J. Y. Xie; F. Wang; P. Huang; T. J. Lu; L. F. Zhang; K.W. Xu // Journal of Nanomaterials;2013, p1 

  Nanoscale Al/W multilayers were fabricated by DC magnetron sputtering and characterized by transmission electron microscopy and high-resolution electron microscopy. Despite the large lattice mismatch and significantly different lattice structures between Al and W, a structural transition from...

• Realization of optimal bandgaps in solid-solid, solid-air, and hybrid solid-air-solid phononic crystal slabs. Reinke, Charles M.; Su, M. F.; Olsson, R. H.; El-Kady, I. // Applied Physics Letters;2/7/2011, Vol. 98 Issue 6, p061912 

  We investigate the optimal conditions for bandgap formation in square-lattice phononic crystal (PnC) slabs composed of a solid matrix with solid or air inclusions. To ensure sufficient impedance mismatch (key for bandgap formation) and fabrication amenability, silicon and silica were chosen as...

• “Cut-off” Effect for Low Temperature Ballistic Phonon Transport Through an Intercalated Nanolayer. Feher, A.; Polyakov, M. L.; Syrkin, E. S.; Shkorbatov, A. G.; Minayev, P. A. // AIP Conference Proceedings;2006, Vol. 850 Issue 1, p1327 

  The ballistic heat transport through an intercalated layer between two semi-infinite crystal lattices is studied. The main result of the present paper is the existence of a “cut-off” frequency for energy transmission. The cut-off frequency appears as a result of the discrete...

• Effects of Interfacial Lattice Mismatching on Wetting of Ni-Plated Steel by Magnesium. Nasiri, Ali; Lee, Mok; Weckman, David; Zhou, Y. // Metallurgical & Materials Transactions. Part A;Nov2014, Vol. 45 Issue 12, p5749 

  In this study, wetting has been characterized by measuring the contact angles of AZ92 Mg alloy on Ni-electroplated steel as a function of temperature. Reactions between molten Mg and Ni led to a contact angle of about 86 deg in the temperature range of 891 K to 1023 K (618 °C to 750 °C)...

• Intergranular films at Au-sapphire interfaces. Baram, Mor; Kaplan, Wayne D. // Journal of Materials Science;Dec2006, Vol. 41 Issue 23, p7775 

  The existence of nanometer-thick amorphous equilibrium films at metal-ceramic interfaces has been experimentally verified for the Au–Al2O3 system. The films were formed using a novel experimental approach, in which thin sputtered films of Au were dewetted on a sapphire substrate which was...

• Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies. M. Gonschorek; D. Simeonov; J.-F. Carlin; E. Feltin; M. A. Py; N. Grandjean // European Physical Journal - Applied Physics;Jun2009, Vol. 47 Issue 9, p0 

  Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (${>}2.5\times 10^{13}$cm−2) located at the heterointerface. These layers have been...

Read the Article