Deformation behavior and plastic instabilities of ultrafine-grained titanium

Jia, D.; Wang, Y. M.; Ramesh, K. T.; Ma, E.; Zhu, Y. T.; Valiev, R. Z.
July 2001
Applied Physics Letters;7/30/2001, Vol. 79 Issue 5
Academic Journal
Ultrafine-grained (UFG) Ti samples have been prepared using equal channel angular pressing followed by cold rolling and annealing. The deformation behavior of these materials, including strain hardening, strain rate dependence of flow stress, deformation/failure mode, and tensile necking instability, have been systematically characterized. The findings are compared with those for conventional coarse-grained Ti and used to explain the limited tensile ductility observed so far for UFG or nanocrystalline metals. © 2001 American Institute of Physics.


Related Articles

  • Simultaneous formation of TiN and TiSi2 by lamp annealing in NH3 ambient and its application to diffusion barriers. Okamoto, Tatsuo; Shimizu, Masahiro; Ohsaki, Akihiko; Mashiko, Youji; Tsukamoto, Katsuhiro; Matsukawa, Takayuki; Nagao, Shigeo // Journal of Applied Physics;12/1/1987, Vol. 62 Issue 11, p4465 

    Presents a study which investigated the dependence of TiN/TiSi[sub2] bilayer formation on silicon by lamp annealing of titanium upon annealing temperature, ambients and impurity in silicon. Cause of the dependence of nitridation ration on annealing ambient; Reason for the increase in...

  • Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayers. Holloway, Karen; Sinclair, Robert // Journal of Applied Physics;2/15/1987, Vol. 61 Issue 4, p1359 

    Presents a study which examined the reactions upon thermal annealing of sputtered titanium-silicon (Ti-Si) multilayers. Methodology in the fabrication of Ti-Si multilayers; Effects of the diffraction pattern of multilayer mechanisms; Results of the annealing process.

  • Evidence of preferential diffusion of impurities along grain boundaries in very pure niobium used for radio frequency cavities. Antoine, C.; Bonin, B.; Safa, H.; Berthier, B.; Tessier, C.; Tocellier, P.; Chevarier, A.; Chevarier, N.; Roux, B. // Journal of Applied Physics;2/15/1997, Vol. 81 Issue 4, p1677 

    In order to overcome dissipation due to impurity segregation at grain boundaries, niobium cavities are submitted to a purification annealing (1300 °C ± 200 °C under vacuum) during which titanium is evaporated onto the Nb surface. The resulting titanium layer acts as a solid state getter...

  • Trapping of hydrogen implanted into titanium. Takeuchi, Y.; Imanishi, N.; Toyoda, K.; Uchino, T.; Iwasaki, M. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p2959 

    Analyzes the depth profiles and annealing behaviors of hydrogen implanted into titanium samples. Experimental procedure; Results of the study; Discussion of findings.

  • Reaction of titanium with silicon nitride under rapid thermal annealing. Morgan, A. E.; Broadbent, E. K.; Sadana, D. K. // Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1236 

    30–90 nm Ti films sputter deposited onto 50 nm Si3N4 have been rapid thermal annealed for 30 s in Ar and N2 ambients, and the phases formed identified using Auger electron spectroscopy, transmission electron microscopy, and electron diffraction. Reaction at 900 °C produces TiN surface...

  • Grain size analysis of C54–TiSi[sub 2] under different processing conditions for deep-submicron polycrystalline silicon gate length. Pang, C. H.; Hing, P.; See, A.; Chong, Y. F. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4596 

    The effect of preamorphization using silicon (Si) ion, different annealing temperatures and heating rates on nucleation density and grain size of C49 and C54–TiSi[sub 2] have been studied. The average grain size of C54–TiSi[sub 2] is found to decrease when the peak annealing...

  • Laser induced transformation of TiSi[sub 2]. Lu, L.; Lai, M. O. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4291 

    Transformation of TiSi[sub 2] on p-type (100) silicon substrates in two substrate conditions (crystalline-Si and 45 nm amorphous Si) induced by laser annealing was investigated. The formation of titanium silicides was characterized using x-ray diffraction and sheet resistance measurement. The...

  • Epitaxial CoSi2 films on Si(100) by solid-phase reaction. Vantomme, André; Nicolet, Marc-A.; Theodore, N. David // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p3882 

    Focuses on a study which investigated the inversion of a bilayer of cobalt on top of titanium and a silicon (100) substrate upon steady-state annealing, and resultant formation of an epitaxial cobalt silicide. Materials and procedure; Results from using reactive ambients; Findings from vacuum...

  • Band gap narrowing of titanium dioxide by sulfur doping. Umebayashi, T.; Yamaki, T.; Itoh, H.; Asai, K. // Applied Physics Letters;7/15/2002, Vol. 81 Issue 3, p454 

    Titanium dioxide (TiO[sub 2]) doped with sulfur (S) was synthesized by oxidation annealing of titanium disulfide (TiS[sub 2]). According to the x-ray diffraction patterns, TiS[sub 2] turned into anatase TiO[sub 2] when annealed at 600 °C. The residual S atoms occupied O-atom sites in TiO[sub...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics