TITLE

Self-limiting atomic-layer deposition of Si on SiO[sub 2] by alternate supply of Si[sub 2]H[sub 6] and SiCl[sub 4]

AUTHOR(S)
Yokoyama, Shin; Ohba, Kenji; Nakajima, Anri
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/30/2001, Vol. 79 Issue 5
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Atomic-layer deposition of Si on SiO[sub 2] with a self-limiting growth mode was achieved at substrate temperatures between 355 and 385 °C by means of alternate supply of Si[sub 2]H[sub 6] and SiCl[sub 4] gas sources. The growth rate was saturated at 2 ML per cycle at these temperatures and for Si[sub 2]H[sub 6] exposure time over 120 s. The smooth surface (∼0.26 nm in arithmetic average roughness) was obtained under the self-limiting condition irrespective of a film thickness up to 6.5 nm. © 2001 American Institute of Physics.
ACCESSION #
4864276

 

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