Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy

Schrottke, L.; Hey, R.; Grahn, H. T.
July 2001
Applied Physics Letters;7/30/2001, Vol. 79 Issue 5
Academic Journal
We have analyzed the electric-field-dependent subband population as well as the carrier dynamics in a double-quantum-well GaAs/(Al,Ga)As superlattice using time-resolved photoluminescence (PL) spectroscopy. Applying a rate equation model, the steady-state subband population of the majority carriers in the two quantum wells and the transfer coefficients for the minority carriers can be directly determined from measured time-dependent PL spectra. A comparison with results derived from steady-state PL investigations demonstrates that the dynamics of the minority carriers are essential in order to determine the population of the majority carriers. In the experiments, we used an n–i–n structure, in which electrons are the majority and holes are the minority carriers. © 2001 American Institute of Physics.


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