Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors

Yeh, Kuan-Lin; Lin, Horng-Chih; Huang, Rou-Gu; Tsai, Ren-Wei; Huang, Tiao-Yuan
July 2001
Applied Physics Letters;7/30/2001, Vol. 79 Issue 5
Academic Journal
Conduction mechanisms for the off-state leakage in Schottky barrier thin-film transistor were explored. It was found that the field-emission process dominates the leakage conduction of the device with the conventional structure as the field strength in the drain junction becomes high, and results in the strong gate-induced drain leakage (GIDL) like phenomenon. In contrast, for the device with a field-induced-drain structure, the high-field region is pulled away from the silicided drain. As a result, the field-emission conduction is eliminated, so the GIDL-like leakage current is effectively suppressed. © 2001 American Institute of Physics.


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