TITLE

Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator

AUTHOR(S)
Velu, G.; Legrand, C.; Tharaud, O.; Chapoton, A.; Remiens, D.; Horowitz, G.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/30/2001, Vol. 79 Issue 5
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, two organic thin-film transistors with SiO[sub 2] and ferroelectric PbZrTiO[sub 3] (PZT) gate insulator are compared. The fabrication of the devices is described and their electrical properties estimated. The PZT-based devices show better performance: Low driving voltage, high Ion/Ioff ratio, etc. Moreover, a memory effect is reported in correlation with ferroelectric properties of PZT thin films. © 2001 American Institute of Physics.
ACCESSION #
4864260

 

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