Direct signature of strained GaN quantum dots by Raman scattering

Gleize, J.; Demangeot, F.; Frandon, J.; Renucci, M. A.; Kuball, M.; Damilano, B.; Grandjean, N.; Massies, J.
July 2001
Applied Physics Letters;7/30/2001, Vol. 79 Issue 5
Academic Journal
We report on a Raman study of strained wurtzite GaN quantum dots embedded in AlN spacers. Various laser excitations between 2.33 and 3.81 eV were used, which allows for selective probing of the dots, through resonant enhancement of the Raman signal. A direct signature of the A[sub 1] (LO) and E[sub 2] phonons of the GaN dots has been obtained. The measured phonon frequencies show that the mean in-plane strain inside the GaN dots approaches the lattice mismatch between GaN and AlN. © 2001 American Institute of Physics.


Related Articles

  • Resonant Raman scattering on self-assembled GaN quantum dots. Kuball, M.; Gleize, J.; Tanaka, Satoru; Aoyagi, Yoshinobu // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p987 

    Self-assembled GaN quantum dots grown on Al[sub 0.15]Ga[sub 0.85]N using Si as antisurfactant have been investigated by resonant Raman scattering. Phonons of GaN quantum dots of different sizes and the Al[sub 0.15]Ga[sub 0.85]N barrier layer were probed selectively by varying the laser...

  • Raman Study of Strain Relaxation in GaN/AlN Quantum Dots. Garro, N.; Cros, A.; Llorens, J. M.; García-Cristóbal, A.; Cantarero, A.; Gogneau, N.; Monroy, E.; Daudin, B. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p617 

    The strain in GaN/AlN self-assembled quantum dots has been investigated by means of Raman scattering spectroscopy. Raman modes attributed to the GaN dots appear blue-shifted in frequency due to the compressive built-in strain. The measured strain-induced Raman shifts are compared with the...

  • Signature of GaN-AlN quantum dots by nonresonant Raman scattering. Gleize, J.; Frandon, J.; Demangeot, F.; Renucci, M. A.; Renucci, M.A.; Adelmann, C.; Daudin, B.; Feuillet, G.; Damilano, B.; Grandjean, N.; Massies, J. // Applied Physics Letters;10/2/2000, Vol. 77 Issue 14 

    Stackings of GaN quantum dots embedded in an AlN matrix, constituting periodic structures with a mean aluminum content in the 80%-90% range, have been investigated by Raman spectroscopy under excitation in the visible range, i.e., far from resonant conditions. For comparison, spectra of an alloy...

  • Phonon modes in self-assembled GaN quantum dots. Yamanaka, Takayuki; Alexson, Dimitri; Stroscio, Michael A.; Dutta, Mitra; Petroff, Pierre; Brown, Jay; Speck, James // Journal of Applied Physics;Nov2008, Vol. 104 Issue 9, p093512 

    Phonons in GaN quantum dots (QDs) fabricated by Stranski–Krastanov growth are analyzed using Raman scattering and continuum models of phonon confinement. The QD samples are evaluated by Raman spectroscopy with four different excitation energies. Each excitation energy has a different...

  • All-optical single-electron read-out devices based on GaN quantum dots. D’Amico, Irene; Fossi, Fausto // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5213 

    We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole-dipole and dipole-monopole interactions. We introduce a semi-analytical model that allows for a rapid and easy estimate of the magnitude...

  • Metalorganic chemical vapor deposition selective growth and characterization... Wang, J.; Nozaki, M. // Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p950 

    Demonstrates the formation of indium gallium nitride quantum dots by selective growth on silicon-patterned GaN epilayer/GaN buffer layer/(0001) sapphire substrates. Optical properties of the InGaN quantum dots; Comparison to the band-gap emission from a reference sample of InGaN/GaN measurements.

  • GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors. Kawasaki, Koji; Yamazaki, Daisuke; Kinoshita, Atsuhiro; Hirayama, Hideki; Tsutsui, Kazuo; Aoyagi, Yoshinobu // Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2243 

    GaN quantum dots were formed on an AlGaN/SiC substrate by gas-source molecular beam epitaxy using a self-assembling technique with Ga droplets. The photoluminescence properties of the quantum dots obtained at several crystallization temperatures were investigated. High photoluminescence...

  • Raman scattering from LO phonon-plasmon coupled modes in gallium nitride. Kozawa, T.; Kachi, T.; Kano, H.; Taga, Y.; Hashimoto, M.; Koide, N.; Manabe, K. // Journal of Applied Physics;1/15/1994, Vol. 75 Issue 2, p1098 

    Presents information on a study that measured Raman spectra of n-type gallium nitride with different carrier concentrations. Experimental procedure; Results and discussion on the study; Conclusion.

  • Observation of electronic Raman scattering from Mg-doped wurtzite GaN. Tsen, K. T.; Koch, C.; Chen, Y.; Morkoc, H.; Li, J.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;5/15/2000, Vol. 76 Issue 20 

    Electronic Raman scattering experiments have been carried out on both molecular beam epitaxy and metal-organic chemical vapor deposition-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (full width at half maximum≅15 cm[sup -1]) observed at...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics