TITLE

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

AUTHOR(S)
Hee Jin Kim; Suk Choi; Seong-Soo Kim; Jae-Hyun Ryou; Yoder, P. Douglas; Dupuis, Russell D.; Fischer, Alec M.; Sun, Kewei; Ponce, Fernando A.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p101102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.
ACCESSION #
48591124

 

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