TITLE

Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells

AUTHOR(S)
Cong, G. W.; Akimoto, R.; Gozu, S.; Mozume, T.; Hasama, T.; Ishikawa, H.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p101901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrated the intersubband absorption in undoped InGaAs/AlAsSb coupled double quantum wells through silicon ion implantation and rapid thermal annealing. For an implantation dose of 1×1014 cm-2, the actual carrier density of a sample annealed at 600 °C for 1 min was ∼7.5×1013 cm-2 (∼75% activation efficiency); the activation energy was ∼1.41 eV. The simultaneously generated quantum well intermixing (QWI) was nonuniform due to the silicon ion distribution. The effects of QWI nonuniformity on both intersubband and interband transitions were explained by eight-band k·p calculation. This study will open a route for monolithic integration of intersubband-transition-based high-speed all-optical switches.
ACCESSION #
48591120

 

Related Articles

  • Silicon crystallite formation in ion-implanted quartz. Ramabadran, Uma B.; Jackson, Howard E.; Farlow, G. C. // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1199 

    Rapid thermally annealed silicon-implanted x-cut α-quartz samples have been examined by Rutherford backscattering and Raman microprobe spectroscopy. The data indicate that the silicon has diffused at 1200 °C to form a buried layer of crystallites of size 1–10 μm. The crystallites...

  • Rapid thermal annealing for 1-MeV arsenic-ion-implanted layers in silicon. Inada, T.; Wakabayashi, S.; Iwasaki, H. // Journal of Applied Physics;5/1/1991, Vol. 69 Issue 9, p6665 

    Presents a study that performed rapid thermal annealing (RTA) for i-MeV arsenic-ion-implanted layers in silicon. Application of high-energy implantation in silicon; Preparation of the arsenic samples; Analysis of the Rutherford backscattering spectra for implanted silicon samples before and...

  • Deactivation of electrically active arsenic in silicon during cooling-down from elevated temperatures. Larsen, A. Nylandsted; Christensen, B.; Shiryaev, S. Yu. // Journal of Applied Physics;5/15/1992, Vol. 71 Issue 10, p4854 

    Examines the deactivation of electrically active ion-implanted arsenic in silicon during cooling-down following rapid thermal annealing (RTA). Description of the crystals used for the experiments; Information on the chemical and carrier-density profiles of arsenic implantation after a zero...

  • Special Features of Electrical Activation of [sup 28]Si in Single-Crystal and Epitaxial GaAs Subjected to Rapid Thermal Annealing. Ardyshev, V. M.; Ardyshev, M. V.; Khludkov, S. S. // Semiconductors;Jan2000, Vol. 34 Issue 1, p27 

    Concentration profiles of [sup 28]Si implanted in single-crystal and epitaxial GaAs were determined by measuring the C-V-characteristics after the postimplantation rapid thermal annealings for 12 s at T = 825,870, and 905°C. The temperature dependence of Hall mobility of electrons in the...

  • Photoreflectance and photoluminescence of partially intermixed GaAs/AlGaAs double quantum wells. Gontijo, I.; Tang, Y. S.; De La Rue, R. M.; Sotomayor Torres, C. M.; Roberts, J. S.; Marsh, J. H. // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5434 

    Focuses on a study of gallium arsenide (GaAs) and aluminum GaAs quantum wells which are intermixed using silicon oxide capped rapid thermal annealing. Application of photoreflectance and photoluminescence in the study; Information on impurity-free vacancy diffusion; Experimental setup; Results.

  • Advantage of rapid thermal annealing over furnace annealing for P-implanted metastable.... Lie, D.Y.C.; Song, J.H. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p592 

    Examines the 100 kiloelectron Volt [sup 31]P implantation to dope the metastable pseudomorphic Ge[sub 0.12]Si[sub 0.88] layer. Comparison between rapid thermal annealing (RTA) and furnace annealing; Elimination of damage and strain by RTA at 700 degrees Celsius; Use of cross-sectional...

  • Effect of free surface and interface on thermal annealing of dislocation loops in silicon. Narayan, J.; Jagannadham, K. // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p1694 

    Focuses on a study which examined the denuded zones free from dislocation loops formed near a free surface or an interface in ion-implanted specimens subjected either to rapid thermal annealing or annealing in a furnace. Observations on the mechanism of action of small dislocation loops;...

  • Electrical profiles of ultrashallow p+ layers formed in Si by low-energy BF2+ ion implantation. Tamaki, Y.; Ozaki, D.; Inada, T. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p083708 

    Carrier-concentration and mobility profiles formed in Si by BF2 implantation and by subsequent rapid thermal annealing (RTA) have been examined by differential Hall-effect measurements. B-concentration profiles are measured before and after RTA by a secondary-ion-mass spectroscopic technique. It...

  • Rapid thermal annealing of arsenic-implanted Si[sub 0.6]Ge[sub 0.4] alloys: Temperature effects. Tishkov, V.S.; Gaiduk, P.I. // Applied Physics Letters;1/29/1996, Vol. 68 Issue 5, p655 

    Examines the effects of arsenide implantation and thermal annealing on the structural transformation of silicon germanide alloys. Use of transmission electron microscopy and x-ray microanalysis; Influence of annealing temperature on residual defects; Observation of dislocation loops in the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics