Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100)GaAs thin films

Cubukcu, M.; von Bardeleben, H. J.; Cantin, J. L.; Lemaı⁁tre, A.
March 2010
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p102502
Academic Journal
Phosphorous alloying in the y=0.06 range allows to engineer ferromagnetic Ga1-xMnxAs1-yPy/(100)GaAs thin films with standard x=0.07 Mn doping in which the easy axes of magnetization can be changed from in-plane to out-of-plane by a small (10 K) temperature rise. Ferromagnetic resonance investigations show the reorientation to be induced by the different temperature dependence of the cubic and uniaxial anisotropy constants.


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