Correlating structural and resistive changes in Ti:NiO resistive memory elements

Heinonen, O.; Siegert, M.; Roelofs, A.; Petford-Long, A. K.; Holt, M.; d'Aquila, K.; Li, W.
March 2010
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p103103
Academic Journal
Structural and resistive changes in Ti-doped NiO resistive random access memory structures that occur upon electroforming have been investigated using hard x-ray microscopy. Electroforming leads to structural changes in regions of size up to about one micrometer, much larger than the grain size of the structure. Such changes are consistent with a migration of ionic species or defects during electroforming over regions containing many crystalline grains.


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