A high-k Tb2TiO5 nanocrystal memory

Tung-Ming Pan; Fa-Hsyang Chen; Ji-Shing Jung
March 2010
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p102904
Academic Journal
In this letter, a metal-oxide-high-k-oxide-silicon (MOHOS) memory structure incorporating a high-k Tb2TiO5 nanocrystal film as the charge trapping layer is reported for nonvolatile memory application. The structural and morphological features of these films were explored by x-ray diffraction, transmission electron microscopic, atomic force microscopy, and x-ray photoelectron spectroscopic. The Tb2TiO5 MOHOS-type memory annealed 800 °C exhibited large threshold voltage shifting (memory window of 2.9 V) and long data retention (charge loss of ∼15 % after ten years for programmed state at room temperature). These results are attributed to the higher probability for trapping the charge carrier due to the formation of a well-crystallized Tb2TiO5 nanocrystal structure with a higher dielectric constant.


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