TITLE

Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source

AUTHOR(S)
Woerdenweber, Jan; Merdzhanova, Tsvetelina; Stiebig, Helmut; Beyer, Wolfhard; Gordijn, Aad
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p103505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
For hydrogenated amorphous silicon (a-Si:H) solar cells, the critical concentration of a given impurity defines the lowest concentration which causes a decay of solar cell efficiency. Values of 2–5×1019 cm-3 are commonly found for the critical oxygen concentration (COcrit) of a-Si:H. Here we report a dependence of COcrit on the contamination source. For state-of-the-art a-Si:H solar cells prepared at the same plasma deposition conditions, we obtain with a (controllable) chamber wall leak COcrit ∼2×1019 cm-3 while for a leak in the gas supply line a higher COcrit of ∼2×1020 cm-3 is measured. No such dependence is observed for nitrogen.
ACCESSION #
48591090

 

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