Electronic and optical properties of CdZnO quantum well structures with electric field and polarization effects

Jeon, H. C.; Park, S. H.; Lee, S. J.; Kang, T. W.; George, T. F.
March 2010
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p101113
Academic Journal
Electronic, optical, and electrical properties of CdZnO/MgZnO quantum well (QW) structures, considering internal field and polarization effect, are investigated by using many-body theory. The CdZnO/MgZnO QW structure with higher Cd composition, which has deeper and stronger confinement, is found to have smaller optical gain because the strain-induced piezoelectric polarization and spontaneous polarization in the well increase with the inclusion of Cd. The internal field and polarization is reduced effectively by using the ferroelectric dipole moment of the Li addition in the well region of the Li-doped CdZnO/ZnMgO QW structure. These results demonstrate that a high-performance optical devices operation can be realized in CdZnO/MgZnO QW structures by eliminating the droop phenomenon.


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