High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

Tabares, G.; Hierro, A.; Ulloa, J. M.; Guzman, A.; Muñoz, E.; Nakamura, A.; Hayashi, T.; Temmyo, J.
March 2010
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p101112
Academic Journal
Schottky photodiodes based on Au-ZnMgO/sapphire are demonstrated covering the spectral region from 3.35 to 3.48 eV, with UV/VIS rejection ratios up to ∼105 and responsivities as high as 185 A/W. Both the rejection ratio and the responsivity are shown to be largely enhanced by the presence of an internal gain mechanism, by which the compensated films become highly conductive as a result of illumination. This causes a large increase in the tunnel current through the Schottky barrier, yielding internal gains that are a function of the incident photon flux.


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