Low subthreshold slope in junctionless multigate transistors

Chi-Woo Lee; Nazarov, Alexei N.; Ferain, Isabelle; Akhavan, Nima Dehdashti; Ran Yan; Razavi, Pedram; Ran Yu; Doria, Rodrigo T.; Colinge, Jean-Pierre
March 2010
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p102106
Academic Journal
The improvement of subthreshold slope due to impact ionization is compared between “standard” inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope.


Related Articles

  • Capture-to-emission ratios for multivalent traps. Landsberg, P. T. // Journal of Applied Physics;9/15/1986, Vol. 60 Issue 6, p2189 

    Presents a scientific formula to capture emission ratios for multivalent traps. Information on the relation between emission and capture coefficients of electrons by traps; Details on the fraction of occupied traps; Inclusion of Auger effects and impact ionization.

  • Point contact readout for a quantum dot terahertz sensor. Pelling, S.; Davis, R.; Kulik, L.; Tzalenchuk, A.; Kubatkin, S.; Ueda, T.; Komiyama, S.; Antonov, V. N. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p073501 

    We introduce a terahertz radiation sensor in which the photon-induced ionization state of a quantum dot is monitored by a point contact formed in the same semiconductor heterostructure. For comparison we used a readout based on a single electron transistor coupled to the same quantum dot. The...

  • Back bias induced dynamic and steep subthreshold swing in junctionless transistors. Parihar, Mukta Singh; Kranti, Abhinav // Applied Physics Letters;7/21/2014, Vol. 105 Issue 3, p1 

    In this work, we analyze back bias induced steep and dynamic subthreshold swing in junctionless double gate transistors operated in the asymmetric mode. This impact ionization induced dynamic subthreshold swing is explained in terms of the ratio between minimum hole concentration and peak...

  • Enhanced ultraviolet pulse generation via dual-color filament interaction induced phase-matching control. Shi, Liping; Li, Wenxue; Zhou, Hui; Wang, Di; Ding, Liang'en; Zeng, Heping // Applied Physics Letters;2/25/2013, Vol. 102 Issue 8, p081112 

    We demonstrated efficient generation of intense vacuum ultraviolet pulses at 133 nm directly from a 400-nm filament in argon gas. The conversion efficiency was significantly enhanced by adding a coaxial 267-nm pump pulse to dramatically ameliorate the phase matching conditions, as the dispersion...

  • Impact-ionization model consistent with the band structure of semiconductors. Sano, Nobuyuki; Yoshii, Akira // Journal of Applied Physics;3/1/1995, Vol. 77 Issue 5, p2020 

    Deals with a study which derived a formula for the impact-ionization probability for electrons formulated in terms of the density of states of semiconductors. Formulation of ionization probability; Ionization probabilities in silicon, gallium arsenide, InAs and InGaAs; Relation of the energy...

  • Improved breakdown voltage and impact ionization in InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate. Kuan-Wei Lee; Nan-Ying Yang; Mau-Phon Houng; Yeong-Her Wang; Po-Wen Sze // Applied Physics Letters;12/26/2005, Vol. 87 Issue 26, p263501 

    The In0.52Al0.48As/In0.53Ga0.47As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10–15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase...

  • High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer. Lee, Sanghoon; Huang, Cheng-Ying; Cohen-Elias, Doron; Law, Jeremy J. M.; Chobpattanna, Varistha; Krämer, Stephan; Thibeault, Brian J.; Mitchell, William; Stemmer, Susanne; Gossard, Arthur C.; Rodwell, Mark J. W. // Applied Physics Letters;12/2/2013, Vol. 103 Issue 23, p233503 

    We demonstrate raised source/drain InAs/In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors incorporating a vertical spacer in the high-field region between the channel and the drain. The spacer significantly reduces off-state leakage at a high drain bias (VDS) without increasing...

  • Switching in organic devices caused by nanoscale Schottky barrier patches. Kunardi, Linda; Troadec, Cedric; Chandrasekhar, N. // Journal of Chemical Physics;5/22/2005, Vol. 122 Issue 20, p204702 

    We have identified a possible electronic origin of metal filaments, invoked to explain the switching behavior of organic devices. Interfaces of two representative organics polyparaphenylene (PPP) and poly(2-methoxy-5-2-ethyl-hexyloxy-1,4-phenylenevinylene) with Ag are investigated using...

  • Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy. Lee, Kyeongmi; Nomura, Kenji; Yanagi, Hiroshi; Kamiya, Toshio; Ikenaga, Eiji; Sugiyama, Takeharu; Kobayashi, Keisuke; Hosono, Hideo // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p033713 

    Although amorphous InGaZnO4 has intensively been studied for a semiconductor channel material of thin-film transistors in next-generation flat-panel displays, its electronic structure parameters have not been reported. In this work, the electron affinities (χ) and the ionization potentials...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics