TITLE

Low subthreshold slope in junctionless multigate transistors

AUTHOR(S)
Chi-Woo Lee; Nazarov, Alexei N.; Ferain, Isabelle; Akhavan, Nima Dehdashti; Ran Yan; Razavi, Pedram; Ran Yu; Doria, Rodrigo T.; Colinge, Jean-Pierre
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p102106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The improvement of subthreshold slope due to impact ionization is compared between “standard” inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope.
ACCESSION #
48591066

 

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