TITLE

Anomalous current transients in organic field-effect transistors

AUTHOR(S)
Sharma, A.; Mathijssen, S. G. J.; Cramer, T.; Kemerink, M.; de Leeuw, D. M.; Bobbert, P. A.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p103306
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Here we study the origin of the gate bias-stress effect in organic p-type transistors. Based on water-mediated exchange between holes in the semiconductor and protons in the gate dielectric, we predict anomalous current transients for a non-constant gate bias, while ensuring accumulation. When applying a strongly negative gate bias followed by a less negative bias a back-transfer of protons to holes and an increase of the current is expected. We verify this counterintuitive behavior experimentally and can quantitatively model the transients with the same parameters as used to describe the threshold voltage shift.
ACCESSION #
48591040

 

Related Articles

  • Proton migration mechanism for the instability of organic field-effect transistors. Sharma, A.; Mathijssen, S. G. J.; Kemerink, M.; de Leeuw, D. M.; Bobbert, P. A. // Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p253305 

    During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based...

  • Drain voltage dependent analytical model of tunnel field-effect transistors. Verhulst, Anne S.; Leonelli, Daniele; Rooyackers, Rita; Groeseneken, Guido // Journal of Applied Physics;Jul2011, Vol. 110 Issue 2, p024510 

    Tunnel field-effect transistors (TFETs) are potential successors of metal-oxide-semiconductor FETs because they promise superior input characteristics. However, the output characteristics of TFETs are poorly understood, and sometimes a superlinear onset, undesirable for circuit design, is...

  • Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors. Rechem, D.; Latreche, S.; Gontrand, C. // Pramana: Journal of Physics;Mar2009, Vol. 72 Issue 3, p587 

    In this paper, we study the effects of short channel on double gate MOSFETs. We evaluate the variation of the threshold voltage, the subthreshold slope, the leakage current and the drain-induced barrier lowering when channel length LCH decreases. Furthermore, quantum effects on the performance...

  • Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications. Soohwan Jang; Ren, F.; Pearton, S. J.; Gila, B. P.; Hlad, M.; Abernathy, C. R.; Hyucksoo Yang; Pan, C. J.; Jenn-Inn Chyi; Bove, P.; Lahreche, H.; Thuret, J. // Journal of Electronic Materials;Apr2006, Vol. 35 Issue 4, p685 

    Si diffusion into GaN was studied as a function of encapsulant type (SiO2 or SiNx) and diffusion temperature. Using a SiO2 encapsulant, the Si diffusion exhibited an activation energy of 0.57 eV with a prefactor of 2.07 x 10-4 cm² sec-1 in the temperature range 800-1,000°C. An...

  • Influence of the polymer dielectric characteristics on the performance of a quaterthiophene organic field-effect transistor. Unni, K.; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel // Journal of Materials Science;Mar2006, Vol. 41 Issue 6, p1865 

    Organic field-effect transistors were fabricated with quaterthiophene as the active material and various polymeric dielectrics as the gate insulator. The conduction parameters such as mobility, threshold voltage, subthreshold swing, the maximum density of surface states etc. were found out. The...

  • InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage. Jung-Hui Tsai; Wen-Shiung Lour; Tzu-Yen Weng; Chien-Ming Li // Semiconductors;Feb2010, Vol. 44 Issue 2, p223 

    InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain...

  • Optimum Dead Time Selection in ZVS Topologies. Havanur, Sanjay // Power Electronics Technology Exclusive Insight;6/ 7/2012, p1 

    The article describes techniques that attempt to optimally adjust the delay on a continuous basis of zero voltage switching (ZVS). The reason a detailed understanding of the transition process and calculation of different intervals, based on metal-oxide semiconductor field-effect transistor...

  • LDMOS FETs Power WiMAX Base Stations. Browne, Jack // Microwaves & RF;Apr2006, Vol. 45 Issue 4, p92 

    Evaluates the Laterally Diffused Metal Oxide Semiconductor Field-Effect Transistors from Freescale and offers information on their frequency range, voltage and efficiency.

  • Design of a Low Voltage CMOS LNA at 2 GHz with Substrate-Bias. Wan Muhamad Hatta, S. F.; Soin, N. // AIP Conference Proceedings;11/6/2008, Vol. 1060 Issue 1, p244 

    A low-voltage (1.5V), 2 GHz cascode CMOS low noise amplifier (LNA) has been designed and simulated using Silvaco’s SMARTSPICE RF. The proposed design employs substrate bias of 0.5V and utilizes inductive source degeneration. This paper further presents an analysis on the effect of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics