TITLE

Directional and controllable edge-emitting ZnO ultraviolet random laser diodes

AUTHOR(S)
Liang, H. K.; Yu, S. F.; Yang, H. Y.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p101116
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO:Al(3%)/n-ZnO:Al(5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heterojunction rib waveguide structure. Hence, emission intensity (threshold current) can be enhanced (reduced) by ∼9 times (∼40%). Directional emission as well as controllability on the number of the random lasing modes can also be achieved.
ACCESSION #
48591038

 

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