TITLE

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

AUTHOR(S)
Leach, J. H.; Wu, M.; Ni, X.; Li, X.; Xie, J.; Özgür, Ü.; Morkoç, H.; Paskova, T.; Preble, E.; Evans, K. R.; Chang-Zhi Lu
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p102109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostructures grown on low-defect-density bulk Fe-doped GaN substrates. We achieved unity current gain cutoff frequencies of 14.3 and 23.7 GHz for devices with gate lengths of 1 and 0.65 μm, respectively. Measurements as a function of applied bias allow us to estimate the average carrier velocity in the channel to be ∼1.0×107 cm/sec for a 1 μm device. Additionally, we found nearly no gate lag in the devices, which is considered a precondition for good performance under large signal operation.
ACCESSION #
48591034

 

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