An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices

Koch, Christoph T.; Özdöl, V. Burak; van Aken, Peter A.
March 2010
Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p091901
Academic Journal
We report on the development of the dark-field inline electron holography technique and its application to map strain in technologically relevant structures, using as an example the strain-engineered gate channel in a 45 nm metal-oxide semiconductor field-effect transistor structure. We show that this technique combines a large field of view of several micrometers with high precision (better than 0.01%), high spatial resolution (better than 1 nm), and very loose experimental requirements not possible with any other technique currently available.


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