TITLE

Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing

AUTHOR(S)
Liu, H. F.; Chua, S. J.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p091902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effects of phosphorus concentration, [P], and postgrowth annealing on the x-ray diffraction and Raman scattering from ZnO:P thin films are presented. The ZnO (0002) diffraction peak exhibits a large monotonic angular shift with increasing [P] up to 5.1×1019 cm-3 while its shift upon annealing is dependent on [P]. No extrinsic phases were detected for the samples studied. Raman spectra reveal disorder-activated vibrational modes, around 276, 510, 582, and 643 cm-1, with increasing [P]. They also reveal local vibrational modes corresponding to PO (∼370 cm-1) and PZn (∼482 cm-1) upon annealing. The intensity evolution of the Raman features, together with the x-ray diffraction results, indicates that phosphorus substituting for zinc is favored at low annealing temperatures while increasing annealing temperature tends to convert phosphorus doping configurations from PZn to PO.
ACCESSION #
48429026

 

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