Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate

Wei Zhao; Ru-Zhi Wang; Xue-Mei Song; Hao Wang; Bo Wang; Hui Yan; Chu, Paul K.
March 2010
Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p092101
Academic Journal
A series of nanostructured GaN Films have been prepared on Si substrates. Field emission measurements show that the oriented nanostructured GaN film with a thickness of 40 nm has an ultralow threshold field of 1.2 V/μm at 1 mA/cm2 and yields a stable emission current of 40 mA/cm2 at 2.8 V/μm, which is comparable to those of carbon nanotubes. A polarization field emission enhancement mechanism with ballistic electron transport is proposed to explain the origin of this ultralow-threshold field emission phenomenon.


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