Electron beam induced current investigations of Pt/SrTiO3-x interface exposed to chemical and electrical stresses

Jiang, W.; Evans, D.; Bain, J. A.; Skowronski, M.; Salvador, P. A.
March 2010
Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p092102
Academic Journal
Pt Schottky contacts were fabricated on oxygen deficient SrTiO3-x [001] single crystals. Electron beam induced current (EBIC) and atomic force microscopy images taken on etched SrTiO3 (001) surfaces revealed that the dark {001} oriented lines observed in EBIC correlate with arrays of dislocation etch pits. Annealing contacts in air (at 120 °C for 10 min) changed the dislocation-related EBIC contrast from dark to bright. Electrically stressing the air-annealed Schottky contacts at -10 V for 1 h caused the dislocation-related EBIC contrast to return to dark. The contrast changes are interpreted as arising from oxygen vacancy motion in response to chemical or electrical stresses.


Related Articles

  • Investigation of IrO[sub 2] and RuO[sub 2] Schottky contacts on AlGaN/GaN heterostructure. Jeon, Chang Min; Lee, Jong-Lam // Journal of Applied Physics;1/15/2004, Vol. 95 Issue 2, p698 

    Electrical properties of rare-earth metal contacts on AlGaN/GaN heterostructure were interpreted in terms of the changes in microstructure and chemical bonding state. When the contacts were annealed under oxygen ambient at 500 °C, the Schottky barrier height increased from 0.56 to 1.10 eV for...

  • Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4 H-SiC. Potapov, A. S.; Ivanov, P. A.; Samsonova, T. P. // Semiconductors;May2009, Vol. 43 Issue 5, p612 

    Effect of annealing on the electrical properties of 50 nickel Schottky contacts formed on a single 4 H-SiC wafer has been studied. It is shown that annealing at 200°C for 1 h favors homogenization of the metal-semiconductor heterointerface, which leads to a narrower scatter of such contact...

  • Conductive atomic force microscopy study of local electronic transport in ZnTe thin films. Kshirsagar, Sachin D.; Krishna, M. Ghanashyam; Tewari, Surya P. // AIP Conference Proceedings;Feb2013, Vol. 1512 Issue 1, p642 

    ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500°C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to...

  • Surface electronic inhomogeneity of the (001)-SrTiO3:Nb crystal with a terrace-structured morphology. Li, Y.; Sun, J. R.; Zhao, J. L.; Shen, B. G. // Journal of Applied Physics;Oct2013, Vol. 114 Issue 15, p154303 

    Local surface conduction of the (001)-orientated SrTiO3:Nb crystal with a terrace-structured morphology has been studied by means of conductive atomic force microscope analysis. We found that the surface conductance is inhomogeneous on the atomic scale; it is high near step edges and low on...

  • Field-induced semiconductor-metal transition in individual NiO–Ni Schottky nanojunction. Xingchen Zhao; Jia-Lin Sun; Jia-Lin Zhu // Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p152107 

    Ni nanowire arrays were obtained by electrochemical deposition in a template. After oxidation, one-dimensional NiO–Ni Schottky junctions with nanoscale-thickness NiO layer were achieved, and the structure was characterized in terms of different scales. By application of an electric field...

  • On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface. Davydov, S. Yu.; Posrednik, O. V. // Semiconductors;Mar2006, Vol. 40 Issue 3, p299 

    The coupling between levels related to silicon and carbon vacancies with metal states is considered in the surface molecule approximation. It is shown that the key role of silicon vacancies in the formation of a Schottky barrier at the Cr-SiC interface is due to the high density of states at the...

  • Metal semiconductor field effect transistor based on single crystal GaN. Khan, M. Asif; Kuznia, J.N.; Bhattarai, A.R.; Olson, D.T. // Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1786 

    Describes a metal semiconductor field effect transistor based on single crystal gallium nitride (GaN). Deposition of GaN layer over sapphire substrate; Estimation of saturated drift velocity; Determination of the gate width.

  • Synthesis and local electrical characterization of ZnO microwalls grown on cracked GaN/Si(111) by aqueous method. Naisen Yu; Yunfeng Wu; Lifang Du; Haiying Du; Zhangwen Mao; Danyang Hu; Yong Wang; Xueliang Zhu // Applied Physics Letters;10/22/2012, Vol. 101 Issue 17, p173103 

    ZnO microwalls have been grown on cracked GaN/Si(111) using aqueous method. The cracks of GaN direct ZnO grow and form two-dimensional microwall networks. Electrical characterization of individual upright standing ZnO microwall was performed by using conductive atomic force microscopy. Enhanced...

  • A novel fabrication technique for a quasicoplanar super-Schottky diode on GaAs. Ruby, R.; Van Duzer, T. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3784 

    Discusses a fabrication of a super-Schottky diode on gallium arsenide (GaAs) using a novel structure. Significance of the small critical geometry between superconducting electrodes to the parasitic-substrate resistance; Use of electron-beam lithography and sputter etching; Mask that protected...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics