Band gap states of copper phthalocyanine thin films induced by nitrogen exposure

Sueyoshi, Tomoki; Kakuta, Haruya; Ono, Masaki; Sakamoto, Kazuyuki; Kera, Satoshi; Ueno, Nobuo
March 2010
Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p093303
Academic Journal
The impact of 1 atm N2 gas exposure on the electronic states of copper phthalocyanine thin films was investigated using ultrahigh-sensitivity ultraviolet photoelectron spectroscopy. The highest occupied molecular orbital band of the film showed a drastic reversible change in the bandwidth and band shape as well as in the energy position upon repeated cycles of N2 exposure and subsequent annealing. Furthermore, two types of gap-state densities with Gaussian and exponential distributions appeared after the exposure and disappeared due to the annealing. These changes are ascribed to a weak disorder in the molecular packing structure induced by N2 diffusion into the film.


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