TITLE

Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar [formula] GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy

AUTHOR(S)
Onuma, T.; Uedono, A.; Asamizu, H.; Sato, H.; Kaeding, J. F.; Iza, M.; DenBaars, S. P.; Nakamura, S.; Chichibu, S. F.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p091913
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influences of enhanced stacking fault (SF) formation, which is peculiar to nitrogen-(N-) polarity growth and lattice-mismatched semipolar heteroepitaxy, on the electrical properties of [formula] Mg-doped GaN (GaN:Mg) epilayers were investigated. Although the residual donor concentration was higher than (0001) GaN because of N-polar growth, comparatively low Mg doping (3×1019 cm-3) gave a hole concentration approximately 1.5×1018 cm-3, which was an order of magnitude higher than (0001) GaN:Mg. As the acceptor ionization energy estimated from low temperature photoluminescence was quite similar for (1011) and (0001) GaN:Mg, the high Mg activation seems to result with the aid of high density SFs. Because the Doppler broadening S parameter for the positron annihilation measurement, which reflects the concentration or size of negatively charged cation vacancies, of (1011) GaN:Mg was smaller than (0001) case, (1011) orientation is well suited to Mg-doping.
ACCESSION #
48428975

 

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