Heterotwin formation during growth of nanolayered Al-TiN composites

Bhattacharyya, Dhriti; Xiang-Yang Liu; Genc, Arda; Fraser, Hamish L.; Hoagland, Richard G.; Misra, Amit
March 2010
Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p093113
Academic Journal
High stacking fault energy (SFE) materials such as Al do not form twins easily. Here, the authors report, through high-resolution transmission electron microscopy, that Al layers in an alternating Al/TiN composite grow in a twin relationship to both the TiN and the underlying Al layers. Density functional theory based ab initio modeling reveals that nitrogen termination in the {111} growth plane of the TiN layers greatly favors the growth of twin oriented Al layers on them. This finding provides a definite way of creating a twin-modulated structure in high SFE materials.


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