Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Xin Zhou; Uchida, Ken; Oda, Shunri
March 2010
Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p092112
Academic Journal
In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.


Related Articles

  • 1/f noise and the field effect in gated resistors. Garfunkel, G. A.; Weissman, M. B. // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p634 

    Presents a quantitative connection made between the time-dependent field effect and 1/f noise in semiconductor devices exhibiting surface state occupancy fluctuations. Factor attributed to the origins of 1/f noise in semiconductors; Characterization of the magnitude of 1/f; Results of the...

  • Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric. Esmaeili-Rad, Mohammad R.; Li, Flora; Sazonov, Andrei; Nathan, Arokia // Journal of Applied Physics;Sep2007, Vol. 102 Issue 6, p064512 

    We report on the stability of nanocrystalline silicon (nc-Si) bottom-gate (BG) thin film transistors (TFTs) with various compositions of hydrogenated amorphous silicon nitride (a-SiNx:H) gate dielectric. TFTs with nitrogen-rich nitride exhibit higher output transconductance, threshold voltage...

  • Two dimensional simulation and modeling of the electrical behavior in nanocrystalline silicon thin-film transistors. Archontas, N.; Georgoulas, N.; Dimitriadis, C. A.; Templier, F.; Oudwan, M.; Kamarinos, G. // Journal of Applied Physics;May2008, Vol. 103 Issue 10, p104507 

    Nanocrystalline silicon thin-film transistors present technological interest in that they combine many of the advantages of amorphous with those of polycrystalline Si structures. Progress in practical implementation of this technology is hampered by limited understanding of the conduction...

  • An amorphous silicon thin film transistor fabricated at 125 degrees C by dc reactive magnetron.... McCormick, C.S.; Weber, C.E. // Applied Physics Letters;1/13/1997, Vol. 70 Issue 2, p226 

    Examines the fabrication of an amorphous silicon thin film transistor using a direct current reactive magnetron sputtering at a substrate temperature of 125 degrees Celsius. Characterization of structural properties of dielectric layers; Evaluation of electrical quality; Field effect mobility...

  • Conductivity fluctuation within a crystalline domain and its origin in pentacene thin-film transistors. Ohashi, Noboru; Tomii, Hiroshi; Matsubara, Ryousuke; Sakai, Masatoshi; Kudo, Kazuhiro; Nakamura, Masakazu // Applied Physics Letters;10/15/2007, Vol. 91 Issue 16, p162105 

    Surface topography and high-resolution potential images in a thin-film transistor with a polycrystalline pentacene active layer have been measured by atomic-force-microscope potentiometry. A potential fluctuation independent of topographic features was found in large flat molecular terraces. The...

  • Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure. Zhou, Xin; Uchida, Ken; Mizuta, Hiroshi; Oda, Shunri // Journal of Applied Physics;Aug2009, Vol. 106 Issue 4, p044511-1 

    Electron transport in the surface oxidized Si nanocrystals ensembles is described based on electrical measurements of thin film transistor structures as functions of temperature and voltage. Contact resistance has been greatly reduced by using a heavily doped silicon-on-insulator layer as...

  • Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors. Benwadih, Mohammed; Chroboczek, J. A.; Ghibaudo, Gérard; Coppard, Romain; Vuillaume, Dominique // Journal of Applied Physics;2015, Vol. 117 Issue 5, p055707-1 

    Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were taken at selected temperatures in the 77K

  • 1/f Noise and Long-term Correlations in Multi-Species Resistor Networks. Pennetta, C.; Alfinito, E.; Reggiani, L. // AIP Conference Proceedings;2007, Vol. 922 Issue 1, p431 

    The 1/fα resistance noise of a thin-film resistor is studied in the temperature range 300 ÷ 800 K by using a multi-species network model. At low temperatures, resistance fluctuations display long-term correlations expressed by a power-law behavior of the corresponding auto-correlation...

  • Fluctuation Theory of Photoluminescence of Porous Silicon. Bondarev, V.N.; Pikhitsa, P.V.; Zelenin, S.V. // Physics of the Solid State;Mar2004, Vol. 46 Issue 3, p537 

    A theory of photoluminescence (PL) kinetics of porous silicon (PS) is developed. In this theory, the approach suggested by the authors earlier is extended to the case of finite temperatures. The theory is based on the concept of electron–hole recombination, which occurs in structural...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics