TITLE

Charge sensing in intrinsic silicon quantum dots

AUTHOR(S)
Podd, G. J.; Angus, S. J.; Williams, D. A.; Ferguson, A. J.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report charge sensing measurements on a silicon quantum dot with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot.
ACCESSION #
48352160

 

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