Charge sensing in intrinsic silicon quantum dots

Podd, G. J.; Angus, S. J.; Williams, D. A.; Ferguson, A. J.
February 2010
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082104
Academic Journal
We report charge sensing measurements on a silicon quantum dot with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot.


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