TITLE

Improved local oxidation of silicon carbide using atomic force microscopy

AUTHOR(S)
Yeong-Deuk Jo; Soo-Hyung Seo; Wook Bahng; Sang-Cheol Kim; Nam-Kyun Kim; Sang-Sig Kim; Sang-Mo Koo
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The atomic force microscopy-based local oxidation (AFM-LO) of silicon carbide (SiC) is extremely difficult in general, mainly due to their physical hardness and chemical inactivity. Herein, we report the strongly enhanced AFM-LO of 4H-SiC at room temperature without the heating, chemicals or photoillumination. It is demonstrated that the increased tip loading force (∼>100 nN) on the highly doped SiC can produce a high enough electric field (∼8×106 V/cm) under the cathode tip for transporting oxyanions, thereby leading to direct oxide growth on 4H-SiC. The doping concentration and electric field profile of the tip-SiC sample structures were further examined by two-dimensional numerical simulations.
ACCESSION #
48352159

 

Related Articles

  • Oxidation behaviour of SiC coatings. Mergia, K.; Lafatzis, D.; Moutis, N.; Speliotis, T.; Apostolopoulos, G.; Cousin, F. // Applied Physics A: Materials Science & Processing;Aug2008, Vol. 92 Issue 2, p387 

    Amorphous silicon carbide (SiC) films were deposited on silicon substrates by radio-frequency magnetron sputtering. The films were oxidized in air in the temperature range 400–900 °C and for times from 1 to 16 h. Neutron reflectivity measurements provided information on the thickness,...

  • Room temperature properties of electrical contacts to alumina composites containing silicon carbide whiskers. Bertram, Brian D.; Gerhardt, Rosario A. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 7, p074902 

    The electrical properties of contacts to hot-pressed alumina composites having variable volume fractions of SiC whiskers (Vw) were investigated with impedance spectroscopy and current-mode atomic force microscopy at room temperature. Three different contact materials were studied: sputtered Pt,...

  • Raman Studies of Defects in Graphene Grown on SiC. Grodecki, K.; Bozek, R.; Borysiuk, J.; Strupinski, W.; Wysmolek, A.; Stępniewski, R.; Baranowski, J. M. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p595 

    The Raman scattering studies of multi-layer graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) substrates are presented. Intensity ratio of the D and G bands was used to estimate the average size of the graphene flakes constituting carbon structures. The...

  • Complete surface exfoliation of 4H-SiC by H[sup +]- and Si[sup +]-coimplantation. Bennett, J. A.; Bennett, J.A.; Holland, O. W.; Holland, O.W.; Budde, M.; Thomas, D. K.; Thomas, D.K.; Feldman, L. C.; Feldman, L.C. // Applied Physics Letters;5/29/2000, Vol. 76 Issue 22 

    Implantation of 4H-SiC with [sup 1]H[sup +] and [sup 28]Si[sup +] ions followed by annealing is shown to result in complete ejection or exfoliation of the implanted layer. This is in contrast to H[sup +]-only implantation where only partial exfoliation of the surface can be achieved. The...

  • Tunneling current and thickness inhomogeneities of ultrathin aluminum oxide films in magnetic tunneling junctions. Luo, E. Z.; Wong, S. K.; Pakhomov, A. B.; Xu, J. B.; Wilson, I. H.; Wong, C. Y. // Journal of Applied Physics;11/15/2001, Vol. 90 Issue 10, p5202 

    Tunneling current and thickness inhomogeneities of ultrathin aluminum oxide layers of magnetic tunnel junctions are studied by conducting atomic force microscopy (CAFM). The current inhomogeneities are attributed to thickness inhomogeneities on a nanometer scale. Thickness distributions are...

  • In situ electric field simulation in metal/insulator/metal capacitors. Gaillard, Nicolas; Pinzelli, Luc; Gros-Jean, Mickael; Bsiesy, Ahmad // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p133506 

    The authors report in this letter the effect of interface topography on metal/insulator/metal (MIM) capacitor electrical properties. This analysis was carried out by numerical simulations of the electric field established in a MIM structure with a 45 nm thick Ta2O5 film. The metal/insulator...

  • Reliability of thermally oxidized SiO2/4H-SiC by conductive atomic force microscopy. Fiorenza, Patrick; Raineri, Vito // Applied Physics Letters;5/22/2006, Vol. 88 Issue 21, p212112 

    The dielectric breakdown (BD) kinetics of silicon dioxide (SiO2) thin films thermally grown on 4H-SiC was determined by comparison between I-V measurements on large area (up to 1.96×10-5 cm2) metal-oxide-semiconductor structures and conductive atomic force microscopy (C-AFM). C-AFM clearly...

  • Surface studies of hydrogen etched 3C-SiC(001) on Si(001). Coletti, C.; Frewin, C. L.; Saddow, S. E.; Hetzel, M.; Virojanadara, C.; Starke, U. // Applied Physics Letters;8/6/2007, Vol. 91 Issue 6, p061914 

    The morphology and structure of 3C-SiC(001) surfaces, grown on Si(001) and prepared via hydrogen etching, are studied using atomic force microscopy (AFM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES). On the etched samples, flat surfaces with large terraces and...

  • Electronic Properties of Thin HfO2 Films Fabricated by Atomic Layer Deposition on 4H-SiC. Taube, A.; Gierałtowska, S.; Gutt, T.; Małachowski, T.; Pasternak, I.; Wojciechowski, T.; Rzodkiewicz, W.; Sawicki, M.; Piotrowska, A. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p696 

    Applicability of thin HfO2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics