Improved local oxidation of silicon carbide using atomic force microscopy

Yeong-Deuk Jo; Soo-Hyung Seo; Wook Bahng; Sang-Cheol Kim; Nam-Kyun Kim; Sang-Sig Kim; Sang-Mo Koo
February 2010
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082105
Academic Journal
The atomic force microscopy-based local oxidation (AFM-LO) of silicon carbide (SiC) is extremely difficult in general, mainly due to their physical hardness and chemical inactivity. Herein, we report the strongly enhanced AFM-LO of 4H-SiC at room temperature without the heating, chemicals or photoillumination. It is demonstrated that the increased tip loading force (∼>100 nN) on the highly doped SiC can produce a high enough electric field (∼8×106 V/cm) under the cathode tip for transporting oxyanions, thereby leading to direct oxide growth on 4H-SiC. The doping concentration and electric field profile of the tip-SiC sample structures were further examined by two-dimensional numerical simulations.


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