Photoinduced inverse spin-Hall effect: Conversion of light-polarization information into electric voltage

Ando, K.; Morikawa, M.; Trypiniotis, T.; Fujikawa, Y.; Barnes, C. H. W.; Saitoh, E.
February 2010
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082502
Academic Journal
The photoinduced inverse spin-Hall effect was observed in a Pt/GaAs hybrid structure. In the GaAs layer, circularly polarized light generates spin-polarized carriers, inducing a pure spin current into the Pt layer through the interface. This pure spin current is, by the inverse spin-Hall effect in the Pt layer, converted into electric voltage. By changing the direction and ellipticity of the circularly polarized light, the electromotive force varies systematically, consistent with the prediction of the photoinduced inverse spin-Hall effect. The observed phenomenon allows the direct conversion of circular-polarization information into electric voltage; this phenomenon can be used as a spin photodetector.


Related Articles

  • Direct conversion of light-polarization information into electric voltage using photoinduced inverse spin-Hall effect in Pt/GaAs hybrid structure: Spin photodetector. Ando, K.; Morikawa, M.; Trypiniotis, T.; Fujikawa, Y.; Barnes, C. H. W.; Saitoh, E. // Journal of Applied Physics;Jun2010, Vol. 107 Issue 11, p113902 

    The direct conversion of light-polarization information into electric voltage has been demonstrated using the photoinduced inverse spin-Hall effect in a Pt/GaAs hybrid structure. In the GaAs layer, spin-polarized carriers are generated by the illumination of circularly polarized light, which...

  • Stability of (100)GaAs surfaces in aqueous solutions. Aspnes, D. E.; Studna, A. A. // Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1071 

    Abrupt (100) GaAs surfaces are observed to be stable against the development of pervasive microscopic roughness in strongly basic (pH 14) solutions but not in NH4OH and neutral H2O. Strong acids (pH 0) produce deep microroughness. The stability can be understood from the free energy of Ga ions...

  • Current self-distribution effects in oxide-confined vertical-cavity surface-emitting lasers. Mulet, J.; Balle, S.; Arias, J.; Martín-Hériz, V.; Esquivias, I. // Optical & Quantum Electronics;Nov2008, Vol. 40 Issue 14/15, p1199 

    We develop a self-consistent electro-optical model for oxide-confined Vertical-Cavity Surface-Emitting Lasers, including optical polarization and spin-flip dynamics. When subject to large signal modulation, current self-distribution effects reduce the amount of spatial-hole burning in the...

  • Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors. Chen, G.; Nguyen, B.-M.; Hoang, A. M.; Huang, E. K.; Darvish, S. R.; Razeghi, M. // Applied Physics Letters;10/31/2011, Vol. 99 Issue 18, p183503 

    The electrical performance of mid-infrared type-II superlattice M-barrier photodetectors is shown to be limited by surface leakage. By applying gate bias on the mesa sidewall surface, leakage current is significantly reduced. Qualitatively IV modeling shows diffusion-dominated behavior of dark...

  • Characteristics of In(Ga)As quantum ring infrared photodetectors. Ling, H. S.; Wang, S. Y.; Lee, C. P.; Lo, M. C. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    Characteristics of In(Ga)As quantum ring infrared photodetectors (QRIPs) were investigated under normal incidence configuration. Compared with quantum dot infrared photodetectors (QDIPs), QRIPs showed wider photocurrent spectra, more stable responsivity with temperature change, and lower dark...

  • Polarization-diverse light absorption enhancement in organic photovoltaic structures with one-dimensional, long-pitch metallic gratings: Design and experiment. Liu, Yifen; Dhakal, Rabin; Dalal, Vikram; Kim, Jaeyoun // Applied Physics Letters;12/3/2012, Vol. 101 Issue 23, p233904 

    We report the design and experimental realization of an organic photovoltaic device structure that can trap incident light in all polarization states without relying on two-dimensional, short-pitch (<400 nm) gratings. Instead, we utilized easily patternable one-dimensional, long-pitch (>1000 nm)...

  • Artificial domain structures realized by local gallium focused Ion-beam modification of Pt/Co/Pt trilayer transport structure. Aziz, A.; Bending, S. J.; Roberts, H.; Crampin, S.; Heard, P. J.; Marrows, C. H. // Journal of Applied Physics;12/15/2005, Vol. 98 Issue 12, p124102 

    We demonstrate that a high-resolution Ga focused ion beam can be used to introduce artificial domain structures in Pt(1.6 nm)/Co(0.5 nm)/Pt(3.5 nm) trilayer transport structures. We have used thin SiO2 overlayers to control the effective energy and dose of Ga ions at the Pt/Co interface. The...

  • Electron spin interferometry using a semiconductor ring structure. Kato, Y. K.; Myers, R. C.; Gossard, A. C.; Awschalom, D. D. // Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p162107 

    A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive transport regime. Optical pumping with circularly...

  • Interfacial, electrical, and spin-injection properties of epitaxial Co2MnGa grown on GaAs(100). Damsgaard, C. D.; Hickey, M. C.; Holmes, S. N.; Feidenhans'l, R.; Mariager, S. O.; Jacobsen, C. S.; Hansen, J. B. // Journal of Applied Physics;Jun2009, Vol. 105 Issue 12, p124502-1 

    The interfacial, electrical, and magnetic properties of the Heusler alloy Co2MnGa grown epitaxially on GaAs(100) are presented with an emphasis on the use of this metal-semiconductor combination for a device that operates on the principles of spin-injection between the two materials. Through...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics