TITLE

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

AUTHOR(S)
Swaminathan, Shankar; Shandalov, Michael; Oshima, Yasuhiro; McIntyre, Paul C.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al2O3 interlayer (IL) and higher-k ALD-TiO2 gate dielectric. An ALD-Al2O3 IL of ∼1 nm thickness reduces the gate leakage current density at the otherwise low band-offset TiO2/Ge interface by six orders of magnitude at flatband. Devices with the thinnest Al2O3 IL exhibited a low capacitance equivalent thickness of 1.2 nm. The hysteresis of the capacitance-voltage curves was <10 mV for TiO2/Al2O3/Ge capacitors with different Al2O3 thicknesses. We obtained a relatively low minimum density of interface states, Dit ∼3×1011 cm-2 eV-1, suggesting the potential of Al2O3 ILs for higher-k/Ge interface passivation.
ACCESSION #
48352150

 

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