Enhanced tunable and pyroelectric properties of Ba(Ti0.85Sn0.15)O3 thin films with Bi1.5Zn1.0Nb1.5O7 buffer layers

Wang, S. J.; Miao, S.; Reaney, I. M.; Lai, M. O.; Lu, L.
February 2010
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082901
Academic Journal
Bi1.5Zn1.0Nb1.5O7 (BZN) buffered Ba(Ti0.85Sn0.15)O3 (BTS) heterostructures have been deposited on LaNiO3/SiO2/Si substrates by pulsed laser deposition. The film and interface microstructures, dielectric and pyroelectric properties of BTS thin films are controlled by the thickness of the BZN buffer layer. The BZN layer suppresses interdiffusion between BTS and the bottom electrode, resulting in a reduction in dielectric loss and leakage current. At 303 K, the dielectric loss, tunability and figure of merit of BZN buffered-BTS films are 0.009, 47.9%, and 68.4, respectively. Furthermore, a promising pyroelectric coefficient and figure of merit, 24.7×10-4 C/m2 K and 16.3×10-5 Pa-1/2 are also attained at 293 K.


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