Fabrication of silicon nanobump arrays by near-field enhanced laser irradiation

Wang, X. C.; Zheng, H. Y.; Tan, C. W.; Wang, F.; Yu, H. Y.; Pey, K. L.
February 2010
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p084101
Academic Journal
A simple approach to fabricate two-dimensional nanobump arrays on silicon (Si) substrate is reported. In the process, a single 248 nm excimer laser pulse was applied on a self-assembled monolayer of 1.5-μm-diameter silica microspheres on a n-doped (100) Si wafer. After laser irradiation at a fluence of 300 mJ/cm2, a regular array of conical Si nanobumps surrounded by a ring shaped trench were fabricated. The structure of the nanobump arrays was characterized by scanning electron microscope, and atomic force microscope. The formed nanobumps were determined to be Si-based bumps with energy disperse spectroscopy. The mechanisms involved in the formation of nanobumps were discussed.


Related Articles

  • Biosensors using the Si nanochannel junction-isolated from the Si bulk substrate. Ahn, Chang-Geun; Park, Chan Woo; Yang, Jong-Heon; Ah, Chil Seong; Kim, Ansoon; Kim, Tae-Youb; Yu, Han Young; Jang, Moongyu; Kim, Sang-Hoon; Baek, In-Bok; Lee, Seongjae; Sung, Gun Yong // Journal of Applied Physics;Dec2009, Vol. 106 Issue 11, p114701 

    The biosensor using a silicon nanochannel field effect transistor has been developed on the basis of a bulk silicon substrate instead of an expensive silicon-on-insulator material, for low cost applications. “Top-down” fabricated Si nanochannels for detecting prostate specific...

  • Imaging silicon by atomic force microscopy with crystallographically oriented tips. Giessibl, F.J.; Hembacher, S.; Bielefeldt, H.; Mannhart, J. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 7, pS15 

    Abstract. The images obtained by atomic force microscopy (AFM) originate from a convolution of atomic tip and sample states. Since the vertical resolution of AFM is approaching the picometer level, the atomic and subatomic structure of the tip is becoming increasingly important. Hem, we...

  • The Effect of Deposition Temperature on the Growth of ZnO Nanorods on Porous Silicon using Sol-gel Immersion Method. Amizam, S.; Mamat, M. H.; Khusaimi, Z.; Rafaie, H. A.; Sahdan, M. Z.; Abdullah, S.; Rusop, M. // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p676 

    Zinc Oxide (ZnO) nanorods were grown on porous silicon substrate by sol-gel immersion method, which is containing of zinc nitrate hexahydrate (Zn(NO3)2·6H2O) and hexamethylenetetramine (C6H12N4).ZnO Nanorods prepared under the different deposition temperature. The surface morphology and...

  • Organization of silica spherical particles into different shapes on silicon substrates. KORUSIEWICZ, B.; MARUSZEWSKI, K. // Materials Science (0137-1339);2007, Vol. 25 Issue 3, p835 

    One of the classes of materials that can be obtained via the sol-gel method are uniform sub-micron silica spherical particles. When deposited on a substrate, they typically form random patterns. In this work, we introduce a method allowing one to influence the shape of the structures created on...

  • Formation of colorized silicon by femtosecond laser pulses in different background gases. Yang, Hong-Dao; Li, Xiao-Hong; Li, Guo-Qiang; Wen, Cai; Qiu, Rong; Huang, Wen-Hao; Wang, Jun-Bo // Applied Physics A: Materials Science & Processing;Aug2011, Vol. 104 Issue 2, p749 

    single-crystal silicon(111) wafer surface fixed on an x- y translation stage is scanned with a focused femtosecond laser beam at a wavelength of 800 nm under different atmospheres (air, vacuum, and nitrogen). Different colors from different angles on the surface of the silicon then appear. From...

  • Fabrication and morphology of porous p-type SiC. Shishkin, Y.; Ke, Y.; Devaty, R. P.; Choyke, W. J. // Journal of Applied Physics;2/15/2005, Vol. 97 Issue 4, p044908 

    Porous silicon carbide fabricated from p-type 4H and 6H SiC wafers by electrochemical etching in hydrofluoric electrolyte is studied. An investigation of the dependence on wafer polarity reveals that pore formation is favored on the C face while complete dissolution occurs on the Si face. When...

  • Electrical activation phenomena induced by excimer laser annealing in B-implanted silicon. Fortunato, G.; Mariucci, L.; La Magna, A.; Alippi, P.; Italia, M.; Privitera, V.; Svensson, B.; Monakhov, E. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2268 

    The activation process induced by excimer laser annealing (ELA) has been investigated in 10 keV B-implanted samples. It is found that for energy densities inducing melt depths of the order or larger of the implanted region the junction depth is controlled by the melt depth, with activation...

  • Selective removal and patterning of a Co/Cu/Co trilayer created by femtosecond laser processing. Ulmeanu, M.; Filipescu, M.; Scarisoreanu, N.; Georgescu, G.; Rusen, L.; Zamfirescu, M. // Applied Physics A: Materials Science & Processing;Jul2011, Vol. 104 Issue 1, p247 

    The selective removal and patterning of a typical pseudo-spin-valve structure, consisting of a Co(20 nm)/ Cu(6 nm)/Co(3 nm) trilayer, by femtosecond laser has been examined in terms of irradiation parameters and layer structure. Ablation thresholds of the individual Co and Cu thin films and the...

  • Diamond-like carbon layer formation on graphite by excimer laser irradiation. Mechler, Á.; Heszler, P.; Kántor, Z.; Szörényi, T.; Bor, Z. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 6, p659 

    Abstract. Irradiation of highly oriented pyrolytic graphite (HOPG) with ArF excimer laser (lambda = 193nm) pulses of 2 J/cm[sup 2] fluence results in the formation of a thin hydrogenfree diamond-like carbon (DLC) film on the surface. The density of the laser-formed DLC layer is approximately 2.8...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics