Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

Marcano, N.; Sangiao, S.; Plaza, M.; Pérez, L.; Pacheco, A. Fernández; Córdoba, R.; Sánchez, M. C.; Morellón, L.; Ibarra, M. R.; De Teresa, J. M.
February 2010
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082110
Academic Journal
We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5–300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.


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