TITLE

Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

AUTHOR(S)
Maeng, W. J.; Woo-Hee Kim; Ja Hoon Koo; Lim, S. J.; Chang-Soo Lee; Taeyoon Lee; Hyungjun Kim
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Titanium oxide (TiO2) layer was used to control the flatband voltage (VFB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (Dit), and flatband voltage (VFB) shift were achieved by PE-ALD TiO2 capping layer.
ACCESSION #
48352122

 

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