TITLE

Transient surface photovoltage of p-type Cu3BiS3

AUTHOR(S)
Mesa, F.; Gordillo, G.; Dittrich, Th.; Ellmer, K.; Baier, R.; Sadewasser, S.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin films of Cu3BiS3 were prepared by coevaporation. Hall-effect, Seebeck-effect, and surface photovoltage measurements show that Cu3BiS3 is a p-type semiconductor with Hall-mobility, free carrier concentration, and thermo-electric power of 4 cm2/V s, 2×1016 cm-3, and 0.73 mV/K, respectively. The work function was determined by Kelvin probe force microscopy to be (4.37±0.04) eV before and (4.57±0.01) eV after deposition of a thin In2S3 layer. Transient surface photovoltage measurements at variable excitation wavelength showed the importance of defect states below the band gap for charge separation and the opportunity for surface defect passivation by a very thin In2S3 layer. The band bending at the Cu3BiS3/In2S3 interface was obtained. The role of grain boundaries for charge transport and charge separation is discussed.
ACCESSION #
48352113

 

Related Articles

  • Local resistive switching of Nd doped BiFeO3 thin films. Shen, Wan; Bell, Andrew; Karimi, Sarah; Reaney, Ian M. // Applied Physics Letters;3/26/2012, Vol. 100 Issue 13, p133505 

    Local resistive switching behavior was investigated in Nd doped BiFeO3 thin film by conductive atomic force microscopy. The resistance of grains in Nd doped BiFeO3 thin films was reversibly switched between a low and high resistance state. When scanning a part of a grain interior, the whole...

  • Retention loss phenomena in hydrothermally fabricated heteroepitaxial PbTiO3 films studied by scanning probe microscopy. Ahn, W. S.; Jung, W. W.; Choi, S. K.; Cho, Yasuo // Applied Physics Letters;2/20/2006, Vol. 88 Issue 8, p082902 

    We observed the retention loss phenomena of the nanodomains with an average diameter of 36 nm and that of the square domains with a size of 1 and 25 μm2 that were reversed by an applying electric field at an atomic force microscopy conductive tip in a heteroepitaxial PbTiO3 thin film, which...

  • Local hysteresis loop measurements by magneto-optical scanning near-field optical microscope. Schoenmaker, Jeroen; dos Santos, Antonio Domingues; Seabra, Antonio Carlos; Souche, Yves; Jamet, Jean-Pierre; Thiaville, André; Ferré, Jacques // Journal of Applied Physics;10/15/2005, Vol. 98 Issue 8, p086108 

    We performed magnetic-field-induced experiments on micron-sized patterned Co70.4Fe4.6Si15B10 square thin-film elements with in-plane magnetic anisotropy by magneto-optical scanning near-field optical microscopy (MO-SNOM) with a spatial resolution better than 200 nm. Markedly different local...

  • Nanomechanical properties studied by atomic force microscopy in combination with an inverse methodology. Win-Jin Chang; Te-Hua Fang // Journal of Applied Physics;12/1/2004, Vol. 96 Issue 11, p6712 

    This study presents a method for calculating the applied force during the nanoindentation process using atomic force microscope (AFM). The determination of the applied force in the nanoindentation system is regarded as an inverse vibration problem. The conjugate gradient method is applied to...

  • Stress evolution during and after sputter deposition of Cu thin films onto Si (100) substrates under various sputtering pressures. Pletea, M.; Brückner, W.; Wendrock, H.; Kaltofen, R. // Journal of Applied Physics;3/1/2005, Vol. 97 Issue 5, p054908 

    The stress evolution during and after dc magnetron sputter deposition of Cu thin films with thicknesses of 20 and 300 nm and deposited with a constant rate of 0.1 nm/s onto Si (100) substrates is studied for various sputtering pressures (0.05–6 Pa). The stress was determined by means of...

  • Refractive-index tailoring and morphological evolutions in Gd2O3—SiO2 and ZrO2—SiO2 composite thin films. Sahoo, N. K.; Thakur, S.; Tokas, R. B.; Kamble, N. M. // Applied Physics A: Materials Science & Processing;Nov2007, Vol. 89 Issue 3, p711 

    Refractive-index tailoring and morphological evolutions in two different thin film composite systems of gadolinia–silica (Gd2O3:SiO2) and zirconia–silica (ZrO2:SiO2) deposited through reactive electron-beam codeposition processes are discussed in this research paper. For Gd2O3:SiO2...

  • Effect of calcination and pH value on the structural and optical properties of titanium oxide thin films. Zayim, E. O. // Journal of Materials Science;Mar2005, Vol. 40 Issue 6, p1345 

    Titanium oxide thin films on glass and silicon wafer substrates were prepared by the sol-gel process. The pH variation and the calcination effect on the optical and structural properties of the films were systematically examined. The coated films were characterized by atomic-force microscopy...

  • Stable charge storage in granular thin films. Xu, Fengting T.; Thaler, Sean M.; Lopez, Carlos A.; Barnard, John A.; Butera, Alejandro; Weston, James L. // Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p074105 

    Highly stable local charge storage by scanning probe microscopy methods has been observed in Fe–SiO2 (and Co–SiO2) granular thin films (5 nm metal granules embedded in SiO2) with decay times as much as two orders of magnitude longer than previously reported for heterogeneous films....

  • Snapthrough occurring in the postbuckling of thin films. Parry, G.; Colin, J.; Coupeau, C.; Foucher, F.; Cimetière, A.; Grilhé, J. // Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081905 

    The postbuckling transition from an initially straight-sided wrinkle to a distribution of bubbles has been investigated by means of finite element simulations in the case of a thin film relying on a rigid substrate. The calculations show that a snapthrough occurs when the buckling wavelength...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics