TiO2 thin-film transistors fabricated by spray pyrolysis

Wöbkenberg, Paul H.; Ishwara, Thilini; Nelson, Jenny; Bradley, Donal D. C.; Haque, Saif A.; Anthopoulos, Thomas D.
February 2010
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082116
Academic Journal
We demonstrate electron transporting thin-film transistors based on TiO2 films deposited from solution by spray pyrolysis under ambient atmosphere. The field-effect electron mobility is found to depend strongly on the device architecture and the type of source and drain electrodes employed. For optimized transistors a maximum mobility value of 0.05 cm2/V s is obtained. Furthermore, the TiO2 transistors show air-stable operating characteristics with a shelf life time of several months. This is the only report on electron transporting transistors based on thin-films of TiO2 deposited by spray pyrolysis. Such devices could be used for the study of charge carrier transport in TiO2 and other related materials.


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