TITLE

Enhanced magnetism in epitaxial SrRuO3 thin films

AUTHOR(S)
Grutter, Alexander; Wong, Franklin; Arenholz, Elke; Liberati, Marco; Vailionis, Arturas; Suzuki, Yuri
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082509
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We observed enhanced magnetization in epitaxial SrRuO3 thin films compared to previously reported bulk and thin film values. The enhancement is strongly dependent on the orientation of the lattice distortions imposed by (001), (110), and (111) oriented SrTiO3 substrates. A larger magnetization enhancement for coherently strained SrRuO3 films on (111) and (110) oriented SrTiO3 compared to films on (001) SrTiO3 confirms the importance of the strain state in determining the magnetic ground state of the Ru ion. Moreover, SrRuO3 films on (111) SrTiO3 exhibit enhanced moments as high as 3.4 μB/Ru ion, suggesting the stabilization of a high-spin Ru4+ state.
ACCESSION #
48352107

 

Related Articles

  • Effect of epitaxy and lattice mismatch on saturation magnetization of γ′-Fe4N thin films. Atiq, Shahid; Hyun-Seok Ko; Siddiqi, Saadat Anwar; Sung-Chul Shin // Applied Physics Letters;6/2/2008, Vol. 92 Issue 22, p222507 

    We report the effect of epitaxial growth and lattice mismatch on the enhancement of saturation magnetization (Ms) of ferromagnetic γ′-Fe4N thin films deposited on different single crystal substrates having lattice mismatches from 0% to 11%. It was found that Ms in the γ′-Fe4N...

  • Lorentz transmission electron microscope study of ferromagnetic domain walls in... Marshall, A.F.; Klein, L. // Journal of Applied Physics;4/15/1999 Part 1 of 2, Vol. 85 Issue 8, p4131 

    Presents information on a study which examined the magnetic microstructure of strontium ruthenium oxide thin films with the use of Lorentz transmission electron microscopy. Experimental details; Results and discussion; Conclusions.

  • Effect of lattice mismatch strains on the structural and magnetic properties of barium ferrite films. Shinde, S. R.; Ramesh, R.; Lofland, S. E.; Bhagat, S. M.; Ogale, S. B.; Sharma, R. P.; Venkatesan, T. // Applied Physics Letters;6/29/1998, Vol. 72 Issue 26 

    The effect of substrate-induced lattice strains on the structural and magnetic properties of epitaxial barium ferrite (BaFe[sub 12]O[sub 19]) thin films is studied. The 5000 Ã… thick film shows a very narrow ferromagnetic resonance (FMR) line with a width of about 140 Oe. After appropriate...

  • Structural expansion and suppression of spiral spin state in Pb-doped BiFeO3 (00l) epitaxial thin films. Bohra, Murtaza; Wu, C. P.; Yeh, H. J.; Chou, H.; Chen, W. C.; Lin, J. W.; Lin, J. G. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07D917 

    We demonstrate that Pb-doped BiFeO3 thin films grown on a strain relaxed SrRuO3 bottom layer on SrTiO3 (STO) substrate undergo a structural expansion effect that is highly dependent on growth temperature, TS. Highly symmetric cubic-like or low symmetric tetragonal structures can be grown at...

  • Growth and magnetism of Cr-doped InN. Rajaram, R.; Ney, A.; Solomon, G.; Harris, J. S.; Farrow, R. F. C.; Parkin, S. S. P. // Applied Physics Letters;10/24/2005, Vol. 87 Issue 17, p172511 

    We present structural and magnetic characterization of Cr-doped InN films grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Low-temperature GaN buffer layers grown by metalorganic vapor-phase epitaxy were used to accommodate the large lattice mismatch between InN...

  • Misfit strain relaxation by dislocations in SrRuO3/SrTiO3 (001) heteroepitaxy. Sang Ho Oha, J.; Chan Gyung Park // Journal of Applied Physics;5/1/2004, Vol. 95 Issue 9, p4691 

    Misfit relaxation by dislocations in perovskite SrRuO3/SrTiO3 (001) heterostructure with low lattice mismatch (f=0.64%) was studied. Pure edge misfit dislocations (MDs) with a Burgers vector of the a<011> type were found to be the major interfacial defects responsible for the misfit relief. They...

  • Near-equilibrium strain relaxation and misfit dislocation interactions in PbTe on PbSe (001) heteroepitaxy. Wiesauer, Karin; Springholz, Gunther // Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5160 

    Strain relaxation of PbTe layers on PbSe (001) by misfit dislocation formation is shown to take place near equilibrium without kinetic barriers. A comparison of the experimental data with different strain relaxation models shows that mutual dislocation interactions are of crucial importance for...

  • Structural and dielectric properties of strain-controlled epitaxial SrTiO3 thin films by two-step growth technique. Yamada, Tomoaki; Astafiev, Konstantin F.; Sherman, Vladimir O.; Tagantsev, Alexander K.; Su, Dong; Muralt, Paul; Setter, Nava // Journal of Applied Physics;9/1/2005, Vol. 98 Issue 5, p054105 

    Structural and dielectric properties of epitaxial SrTiO3 (STO) thin films on LaAlO3 substrates fabricated by a two-step growth technique using pulsed laser deposition were investigated by in situ and ex situ observations in terms of strain relaxation from the lattice mismatch between the film...

  • Strain nonuniformity in GaAs heteroepitaxial films on Si(001) studied by x-ray diffraction. Shalimov, Artem; Polish_hook, Jadwiga; Kaganer, Vladimir M.; Calamiotou, Maria; Georgakilas, Alexandros // Journal of Applied Physics;1/1/2007, Vol. 101 Issue 1, p013517 

    High-resolution x-ray diffraction measurements are used to fully characterize the strain state of relaxed highly mismatched GaAs films, grown on vicinal Si (001) substrates by molecular beam epitaxy. The nonuniformity of the misfit dislocation network at the GaAs/Si (001) interface is studied by...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics