TITLE

Forward tunneling current in GaN-based blue light-emitting diodes

AUTHOR(S)
Dawei Yan; Hai Lu; Dunjun Chen; Rong Zhang; Youdou Zheng
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p083504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Forward tunneling current in InGaN/GaN multiquantum-well blue light-emitting diodes grown on sapphire substrate was studied by temperature-variable current-voltage (I-V) measurement. All semilog I-V curves obtained in the temperature range from 100 to 300 K exhibit two successive linearly dependent regions at low forward bias. The corresponding slopes appear to be insensitive to temperature, which indicates a dominant defect-assisted tunneling process. It is found that the tunneling current varies approximately as a function of ∼exp(-βEg+λeV), where β and λ are constants independent of temperature and voltage. The temperature- and voltage-dependence of forward tunneling current are explained by thermally induced band gap shrinkage and bias-induced route change of diagonal tunneling, respectively. The likely tunneling entities involved in the forward tunneling process are also discussed.
ACCESSION #
48352100

 

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