Forward tunneling current in GaN-based blue light-emitting diodes

Dawei Yan; Hai Lu; Dunjun Chen; Rong Zhang; Youdou Zheng
February 2010
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p083504
Academic Journal
Forward tunneling current in InGaN/GaN multiquantum-well blue light-emitting diodes grown on sapphire substrate was studied by temperature-variable current-voltage (I-V) measurement. All semilog I-V curves obtained in the temperature range from 100 to 300 K exhibit two successive linearly dependent regions at low forward bias. The corresponding slopes appear to be insensitive to temperature, which indicates a dominant defect-assisted tunneling process. It is found that the tunneling current varies approximately as a function of ∼exp(-βEg+λeV), where β and λ are constants independent of temperature and voltage. The temperature- and voltage-dependence of forward tunneling current are explained by thermally induced band gap shrinkage and bias-induced route change of diagonal tunneling, respectively. The likely tunneling entities involved in the forward tunneling process are also discussed.


Related Articles

  • Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue.... Casey Jr., H.C.; Muth, J. // Applied Physics Letters;5/13/1996, Vol. 68 Issue 20, p2867 

    Examines the dominance of tunneling current and band filling in indium gallium nitride (GaN)/aluminum GaN double heterostructure blue light-emitting diodes. Representation of the current-voltage behavior; Observation on the emission peak; Intensity of the shifting peak spectra; Details on the...

  • Tunnel injection In0.25Ga0.75N/GaN quantum dot light-emitting diodes. Bhattacharya, Pallab; Zhang, Meng; Hinckley, John // Applied Physics Letters;12/20/2010, Vol. 97 Issue 25, p251107 

    Hole tunnel injection is incorporated in the design of In0.25Ga0.75N/GaN quantum dot light-emitting diodes with peak emission at λ∼500 nm. Calculations show that cold holes are uniformly injected into all five quantum dot layers in the active region. Measurements were made on devices...

  • Influence of a sapphire substrate on the emission spectra of gallium nitride light-emitting diodes. Kudryashov, V. E.; Mamakin, S. S.; Yunovich, A. É. // Technical Physics Letters;Jul99, Vol. 25 Issue 7, p536 

    The emission spectra of green light-emitting diodes based on InGaN/AlGaN/GaN heterostructures revealed a weak thin doublet line at the long-wavelength edge. This line is ascribed to luminescence of residual Cr[sup 3+] impurity ions in the sapphire substrate (similar to ruby, Al[sub 2]O[sub 3]...

  • Study of tunneling transport of carriers in structures with an InGaN/GaN active region. Sizov, V.; Neploh, V.; Tsatsulnikov, A.; Sakharov, A.; Lundin, W.; Zavarin, E.; Nikolaev, A.; Mintairov, A.; Merz, J. // Semiconductors;Dec2010, Vol. 44 Issue 12, p1567 

    Properties of light-emitting structures with an InGaN/GaN active region emitting in a range of 500-550 nm are studied. Photoluminescence of the structures is studied at various values of external bias and temperature as well as with time resolution. With the reverse bias, a decrease in the...

  • An explanation for invalidity of working currents' derating on improving light-emitting diode devices' reliability. Liu, Lilin; Yang, Jianfu; Teng, Dongdong; Qi, Shan; Wang, Gang // Journal of Applied Physics;Jul2013, Vol. 114 Issue 2, p023102 

    Derating of the working current level does not work for improving GaN-based light-emitting diode (LED) devices' reliability. The present work demonstrates that it is not the levels but the specific components of the applied electrical currents weighing more on LEDs' degradation. Existing defects...

  • The Electrical Characteristics Model of GaN/InGaN/GaN Heterostructure in InGaN-based LED. Mulyanti, Budi; Hasanah, Lilik // Applied Physics Research;2012, Vol. 4 Issue 2, p98 

    The calculation model of tunneling current through GaN/InGaN/GaN heterostructure in InGaN-based LED using the transfer matrix method employed to verify the result of calculation of tunneling current implemented analytically. The analytical method applied through solving theoretically the...

  • Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes. Shan, Qifeng; Meyaard, David S.; Dai, Qi; Cho, Jaehee; Fred Schubert, E.; Kon Son, Joong; Sone, Cheolsoo // Applied Physics Letters;12/19/2011, Vol. 99 Issue 25, p253506 

    The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current-voltage measurements. At low temperature, the leakage current is attributed to variable-range-hopping conduction. At high temperature, the leakage current is explained by a thermally...

  • Electrical characteristics of InGaN/GaN light-emitting diodes grown on GaN and sapphire substrates. Cao, X.A.; Teetsov, J.M.; D'Evelyn, M.P.; Merfeld, D.W.; Yan, C.H. // Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p7 

    We report on the electrical characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on sapphire and free-standing GaN substrates. As a result of defect reduction, the tunneling current in the homoepitaxially grown LED was remarkably suppressed and...

  • Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes. der Maur, M. Auf; Galler, B.; Pietzonka, I.; Strassburg, M.; Lugauer, H.; Di Carlo, A. // Applied Physics Letters;9/29/2014, Vol. 105 Issue 13, p1 

    Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics