TITLE

Coherent backscattering in optical microring resonators

AUTHOR(S)
Morichetti, F.; Canciamilla, A.; Martinelli, M.; Samarelli, A.; De La Rue, R. M.; Sorel, M.; Melloni, A.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p081112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of backscattering induced by waveguide sidewall roughness in integrated ring resonators (RRs) are experimentally observed. We demonstrate that coherent backscattering, originated by multiple round trips in the RR, increases with the square of the effective group index of the cavity and can dramatically affect the behavior of integrated RRs even at moderate quality factors of 104. From our results backscattering emerges as one of the most severe limiting factors on the performance of RRs fabricated with state-of-the-art silicon-on-insulator nanowaveguides.
ACCESSION #
48352096

 

Related Articles

  • Electro-optically switched compact coupled photonic crystal waveguide directional coupler. Zablocki, Mathew J.; Sharkawy, Ahmed; Ebil, Ozgenc; Shi, Shouyuan; Prather, Dennis // Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p081110 

    In this paper, we present a compact photonic crystal directional coupler in a silicon on insulator platform electro-optically switched at 150 kHz with a switching time of 620 ns under a low voltage operation of 2.9 V. The switch design utilizes a coupled photonic crystal structure designed to...

  • Ultracompact and silicon-on-insulator-compatible polarization splitter based on asymmetric plasmonic–dielectric coupling. Gao, Linfei; Hu, Feifei; Wang, Xingjun; Tang, Liangxiao; Zhou, Zhiping // Applied Physics B: Lasers & Optics;Nov2013, Vol. 113 Issue 2, p199 

    An ultracompact and silicon-on-insulator-compatible polarization splitter (PS) is proposed by utilizing asymmetric directional coupling between a hybrid plasmonic waveguide and a strip dielectric waveguide. Owing to the plasmon-assisted asymmetry, birefringence is highly enhanced. Polarization...

  • Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications. Shiyang Zhu; Yu, M. B.; Lo, G. Q.; Kwong, D. L. // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p081103 

    Integrated silicon-on-insulator waveguide-based silicide Schottky-barrier photodetectors were fabricated using low-cost standard Si complementary metal-oxide-semiconductor processing technology. The thin epitaxial NiSi2 layer formed by solid-state Ti-interlayer mediated epitaxy on the top of...

  • Simulation studies of silicon electro-optic waveguide devices. Giguere, Stephen R.; Friedman, Lionel; Soref, Richard A.; Lorenzo, Joseph P. // Journal of Applied Physics;11/15/1990, Vol. 68 Issue 10, p4964 

    Deals with a study which analyzed several silicon-on-insulator guided-wave structures as potential electro-optic waveguide modulators using the PISCES-II two-dimensional device simulation program. Methods; Results and discussion; Conclusion.

  • Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding. Jianwei Mu; Soref, Richard; Kimerling, Lionel C.; Michel, Jurgen // Applied Physics Letters;1/20/2014, Vol. 104 Issue 3, p031115-1 

    Silicon-on-nitride (SON) is a convenient, low-loss platform for mid-infrared group IV plasmonics and photonics. We have designed 5-layer SON channel-waveguides and slab-waveguides for the 2.0 to 5.4 μm wavelength range and have simulated the resulting three-dimensional (3D) and...

  • All-optical switching in a nonlinear periodic-waveguide structure. Sankey, N.D.; Prelewitz, D.F. // Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1427 

    Examines all-optical switching in a silicon-on-insulator periodic wave guide structure. Analysis of measurements taken on the wave guide; Illustration of bistability at low intensities with unstable dynamics at higher pulse energies; Significance of Auger-assisted, carrier recovery time in the...

  • Optical switching in a metal-semiconductor-metal waveguide structure. Bieber, Amy E.; Prelewitz, David F. // Applied Physics Letters;6/19/1995, Vol. 66 Issue 25, p3401 

    Investigates optical switching in a metal-semiconductor-metal waveguide structure. Presentation of a silicon-on-insulator waveguide with aluminum interdigitated fingers; Compatibility of the structure with very large scale integrated manufacturing processes; Presence of gap in the dispersion...

  • Coupled resonator optical waveguides based on silicon-on-insulator photonic wires. Fengnian Xia; Sekaric, Lidija; O’Boyle, Martin; Vlasov, Yurii // Applied Physics Letters;7/24/2006, Vol. 89 Issue 4, p041122 

    Coupled resonator optical waveguides (CROWs) comprised of up to 16 racetrack resonators based on silicon-on-insulator (SOI) photonic wires were fabricated and characterized. The optical properties of the CROWs were simulated using measured single resonator parameters based on a matrix approach....

  • Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal–oxide–semiconductor field-effect transistors. Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N.; Mercha, A.; Simoen, F.; Claeys, C. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4461 

    In this article, the impact of several electrical and technological parameters on a particular type of Lorentzian noise, occurring in deep submicron silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors with an ultrathin gate dielectric is described and a...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics