TITLE

Interesting trends in direct current electrical conductivity of chemical vapor deposited diamond sheets

AUTHOR(S)
Sikder, A. K.; Misra, D. S.; Palnitkar, Umesh; Shirodkar, V. S.
PUB. DATE
August 2001
SOURCE
Journal of Applied Physics;8/1/2001, Vol. 90 Issue 3
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Self-supported diamond sheets of the thickness ranging from 15 to 30 μm were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the sheets with varying amount of nondiamond impurities. Routine characterization of the sheets was carried out using scanning electron microscopy, x-ray diffractometry, Raman spectroscopy, Fourier transform infrared spectroscopy, and Positron annihilation spectroscopy techniques. Detailed measurements of room temperature electrical conductivity (σ[sub 300]), current–voltage (I–V) characteristics, and annealing studies on the sheets deposited with various structural disorder have yielded useful information about the electrical conduction in this interesting material. σ[sub 300] and I–V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond sheets deposited at low deposition pressure (P[sub d]<60 Torr) contain negligible nondiamond impurities and show σ[sub 300]≅10[sup -6]–10[sup -7] S.cm[sup -1]. The I–V characteristics in these sheets show space charge limited conduction behavior with I∝V[sup n] and n>1, in high voltage range. In contrast the sheets deposited at higher pressure (60 Torr and higher), containing high concentration of nondiamond impurities, show a sharp reduction in the values of σ[sub 300]. Interestingly, the conduction in these sheets is ohmic with n values nearly equal to unity. Similarly the sheets deposited with nitrogen also show a sharp reduction in σ[sub 300]. Annealing of all types of diamond sheets results in a decrease in σ[sub 300] values by several orders of magnitude. In the sheets deposited at low P[sub d], the n values increase sharply with annealing. On the other hand the values of n in the sheets deposited at higher pressure remain constant with annealing. The above results are ...
ACCESSION #
4826053

 

Related Articles

  • Comparison of Thermal Conductivities on Abraded and Untreated CVD-Diamond Obtained by Scanning Thermal Microscopy. Altes, A.; Heiderhoff, R.; Balk, L. J.; Jentsch, H. G.; Rosiwal, S. M. // International Journal of Modern Physics B: Condensed Matter Phys;3/20/2002, Vol. 16 Issue 6/7, p922 

    Diamond materials have become progressively significant in the fabrication of heat sinks for power devices and lasers. To investigate the influence of polishing on CVD-Diamond, the surfaces of 〈100〉 and 〈110〉 coatings were analyzed, after a first abrasive treatment on a...

  • Early formation of chemical vapor deposition diamond films. Iijima, Sumio; Aikawa, Yumi; Baba, Kazuhiro // Applied Physics Letters;12/17/1990, Vol. 57 Issue 25, p2646 

    Nanometer-size diamond particles formed on a silicon substrate by the hot-filament chemical vapor deposition method were examined by a high-resolution electron microscope. The particles developed well-faceted cuboctahedral habits. Examination of their morphologies and microstructures provides a...

  • Preparation of textured diamond films on Si substrates by hot-filament chemical-vapor deposition. Ikoma, Keiko; Yamanaka, Mitsugu // Journal of Applied Physics;9/1/1993, Vol. 74 Issue 5, p3519 

    Presents information on a study which deposited diamond on silicon(111) substrates by a two-step hot-filament chemical vapor deposition method consisting of the pretreatment and growth processes. Experimental procedure; Characterization of the products by scanning electron microscopy; Formation...

  • Electron-emission-enhanced diamond nucleation on Si by hot filament chemical vapor deposition. Qijin Chen; Zhangda Lin // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2450 

    Demonstrates the diamond nucleation of mirror-polished silicon by electron emission using hot filament chemical vapor deposition. Data on the nucleation density; Discussion of the mechanism of diamond nucleation; Role of electron transmission in the enhancement of the diamond nucleation.

  • Electron emission from nitrogen-doped pyramidal-shape diamond and its battery operation. Okano, K.; Yamada, T. // Applied Physics Letters;4/21/1997, Vol. 70 Issue 16, p2201 

    Reports on a practical diamond cold cathode having pyramidal-shape array structure battery-driven flat panel display. Growth of diamond cold cathode using chemical vapor deposition technique; Achievement of pyramidal-shape array structure; Identification of the pyramids as diamonds;...

  • Temperature dependent mobility in single-crystal and chemical vapor-deposited diamond. Pan, L. S.; Kania, D. R.; Pianetta, P.; Ager, J. W.; Landstrass, M. I.; Han, S. // Journal of Applied Physics;3/15/1993, Vol. 73 Issue 6, p2888 

    Presents a study that determined the combined electron and hole mobility of single-crystal type IIa natural diamond and a polycrystalline diamond film deposited by chemical vapor deposition using transient photoconductivity as a function of excitation decay and temperature. Background on the...

  • Nucleation of diamond during hot filament chemical vapor deposition. Singh, Jogender; Vellaikal, M. // Journal of Applied Physics;3/15/1993, Vol. 73 Issue 6, p2831 

    Presents a study that investigated the mechanism of nucleation of diamond during hot filament chemical vapor deposition (HFCVD) process by high resolution transmission electron microscopy. Nucleation and growth characteristics of crystalline diamond; Details on the steps involved during the...

  • Experimental investigation and computational modeling of hot filament diamond chemical vapor... Zumbach, Volker; Schafer, Jorg; Tobai, Jens; Ridder, Michael; Dreier, Thomas; Schaich, Thomas; Wolfrum, Jurgen; Ruf, Bernhard; Behrendt, Frank; Deutschman, Olaf; Warnatz, Jurgen // Journal of Chemical Physics;10/15/1997, Vol. 107 Issue 15, p5918 

    Reports on experimental investigation and computational modeling of hot filament diamond chemical vapor deposition. Methods used to determine absolute concentrations of stable hydrocarbons and radicals; Varying filament and substrate temperatures; Concentration of vibrationally excited hydrogen.

  • Measurement of C[sub 6]H[sub 6] densities in a diamond deposition system. Goyette, A.N.; Anderson, L.W.; Peck, J.R.; Lawler, J.E. // Journal of Chemical Physics;3/1/1999, Vol. 110 Issue 9, p4647 

    Discusses the absolute column densities of gas phase C[sub 6]H[sub 6] and upper limits on absolute C[sub 4]H[sub 2] and C[sub 2]H[sub 3] concentrations in a hot filament diamond chemical vapor deposition reactor. Monitoring of the steady state density of C[sub 6]H[sub 6] as a function of C[sub...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics