Infrared absorption of an In[sub 0.2]Ga[sub 0.8]As/GaAs quantum-well infrared photodetector employing a p–n–p camel diode structure

Son, Heesoo; Park, Jinsung; Hong, Songcheol; Jo, Sung-June; Song, Jong-In
July 2001
Applied Physics Letters;7/23/2001, Vol. 79 Issue 4
Academic Journal
Far-infrared absorption of an In[sub 0.2]Ga[sub 0.8]As/GaAs multiple-quantum-well infrared photodetector employing a p–n–p camel diode structure is studied. The detector showed a photocurrent response to normal incident light at approximately 3 μm due to the intersubband hole transition, which is attributed to the strong hole–band mixing of the strained multiple quantum well. Application of the camel diode structure to the photodetector substantially reduced the dark hole current, resulting in an improved detectivity. © 2001 American Institute of Physics.


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