Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires

Yokoyama, Shin; Ohba, Kenji; Kawamura, Kensaku; Kidera, Toshiro; Nakajima, Anri
July 2001
Applied Physics Letters;7/23/2001, Vol. 79 Issue 4
Academic Journal
The low-temperature (410 °C) selective deposition of Si on silicon nitride has been achieved by means of the time-modulated flow of disilane while a very small amount of Si is deposited on SiO[sub 2]. Very narrow (21 nm width and 28 nm thick) Si wires have been fabricated using the selective deposition. The resistivity of the Si wires fabricated by the selective deposition is much smaller (∼1/5) than that fabricated by the conventional reactive ion etching followed by annealing. This technique will be applicable to the formation of a polycrystalline silicon gate with small resistivity for the high-performance ultrasmall metal–oxide–semiconductor transistors and quantum effect devices. © 2001 American Institute of Physics.


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