TITLE

Greatly enhanced detection sensitivity for carbon, nitrogen, and oxygen in silicon by secondary-ion-mass spectrometry

AUTHOR(S)
Gnaser, Hubert
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/23/2001, Vol. 79 Issue 4
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The detection limits of secondary-ion-mass spectrometry for carbon, nitrogen, and oxygen in silicon are determined and are shown to be as low as about 1×10[sup 14] atoms/cm[sup 3] for nitrogen and 2×10[sup 15] atoms/cm[sup 3] for carbon and oxygen. This very high sensitivity is achieved by an analytical approach: to suppress the interference from residual-gas adsorption onto the sputtered surface, the elemental concentrations are extrapolated to a zero contribution from these adsorbed species by an incremental increase of the applied ion-beam erosion rate. © 2001 American Institute of Physics.
ACCESSION #
4825995

 

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