Dynamical behaviors of GaCl on the GaAs(001) 4×6 surface by pulsed molecular beam scattering

Ohashi, Masafumi; Ozeki, Masashi
July 2001
Applied Physics Letters;7/23/2001, Vol. 79 Issue 4
Academic Journal
We studied dynamical behaviors of gallium chloride (GaCl) on a GaAs(001) 4×6 surface using pulsed molecular beam scattering. The angular distribution of reflected GaCl consists of two parts; inelastic direct scattering contribution and thermal desorption of trapped molecules on the GaAs(001) 4×6 surface. We divided the time of flight spectra of thermally desorbed GaCl into two components with activation energies of 22.0 and 10.5 kcal/mol corresponding to GaCl trapping wells. These wells were associated with two comparatively large domains on the GaAs(001) 4×6 surface. The relatively large activation energy is responsible for the strong dipole-electrostatic interaction between GaCl, which has a large dipole moment, and the ionic GaAs crystal. © 2001 American Institute of Physics.


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