TITLE

Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors

AUTHOR(S)
Wang, W.; Deng, J.; Hwang, J. C. M.; Xuan, Y.; Wu, Y.; Ye, P. D.
PUB. DATE
February 2010
SOURCE
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Charge pumping was used to characterize the interface traps between Al2O3 and In0.75Ga0.25As in an n-channel inversion-mode metal-oxide-semiconductor field-effect transistor (MOSFET). By analyzing the charge pumped under gate voltage pulses of different rise and fall times, the interface trap density was extracted across the band gap of In0.75Ga0.25As. The interface trap density was found to be 4×1012 cm-2 eV-1 near the conduction band and to peak at 3×1013 cm-2 eV-1 mid-gap. The result helps explain the promising on-state performance of the Al2O3/In0.75Ga0.25As MOSFET and the need to further improve the interface so that its off-state performance can be on par with that of the Si MOSFET.
ACCESSION #
48199563

 

Related Articles

  • Low-temperature mobilities and energy loss rates of two-dimensional electrons in Si inversion layers. Kyung Hwa Park; Hirakawa, Kazuhiko; Takagi, Shinichi // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p601 

    We have investigated mobilities of two-dimensional (2D) in n-type Si-metal oxide semiconductor field effect transistors (Si-MOSFETs) and observed anomalously strong temperature dependence of mobility in the low electron density regions at low temperatures. It is found that the observed strong...

  • A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length. Hartstein, A.; Albert, N. F.; Bright, A. A.; Kaplan, S. B.; Robinson, B.; Tornello, J. A. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2493 

    Presents a study that investigated the characteristics of silicon metal-oxide-semiconductor field effect transistor. Methodology; Determination of the electrical conductance of the of the transistors; Analysis of the current-voltage characteristics of the sample.

  • The Wide Bandgap Bandwagon. Lecklider, Tom // EE: Evaluation Engineering;Jul2012, Vol. 51 Issue 7, p8 

    The article discusses the future of wide-bandgap devices with silicon carbide (SiC) rectifiers. According to Jimmy Yeh, director of strategic marketing at GE Aviation Systems, SiC is expected to play a major role in reducing weight and improving reliability, but challenges linked to the yield...

  • Investigation of floating body effects in silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Ouisse, T.; Ghibaudo, G.; Brini, J.; Cristoloveanu, S.; Borel, G. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3912 

    Presents a study which proposed an analytical model and experimental results to account for the floating body effects in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect transistors (MOSFET). Purpose of the drain current model; Key points in the universal conductance and...

  • High Temperature Reliability of the SiC-MOSFET with Copper Metallization. Hiroaki Okabe; Motoru Yoshida; Takaaki Tominaga; Jun Fujita; Kazuyo Endo; Yoshinori Yokoyama; Kazuyasu Nishikawa; Yoshihiko Toyoda; Satoshi Yamakawa // Materials Science Forum;2014, Vol. 778-780, p955 

    We investigated the SiC-MOSFET with Cu metallization instead of conventional Al metallization to apply to high reliability power modules. As Cu has higher electrical and thermal conductivity, yield strength, and tolerance of its migration than those of Al, applying Cu to metallization and wire...

  • Manipulation of elementary charge in a silicon charge-coupled device. Fujiwara, Akira; Takahashi, Yasuo // Nature;3/29/2001, Vol. 410 Issue 6828, p560 

    Reports on the manipulation of an elementary charge in a silicon charge-coupled device. The use of metal-oxide-semiconductor field-effect-transistors (MOSFET); Creation of this device from two closely packed silicon-wire MOSFET.

  • Coulomb blockade in a Si channel gated by an Al single-electron transistor. Sun, L.; Brown, K. R.; Kane, B. E. // Applied Physics Letters;10/1/2007, Vol. 91 Issue 14, p142117 

    We incorporate an Al–AlOx–Al single-electron transistor as the gate of a narrow (∼100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in...

  • Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors. Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K. // Journal of Applied Physics;12/15/2012, Vol. 112 Issue 12, p124511 

    Three-dimensional (3-D) topological insulators (TIs) are characterized by the presence of metallic surface states and a bulk band gap. Recently, theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of...

  • Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth. Woon, W. Y.; Wang, S. H.; Chuang, Y. T.; Chuang, M. C.; Chen, C. L. // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p141906 

    We investigate the solid phase epitaxial regrowth (SPER) dynamics of phosphorus doped Si:C by time resolved reflectivity and high resolution x-ray diffraction. The effect of SPER kinetics on strain profile and dopant activation is analyzed. The accumulated tensile strain induced by both C and P...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics