Comparative photoluminescence study of close-packed and colloidal InP/ZnS quantum dots

Ung Thi Dieu Thuy; Pham Thi Thuy; Nguyen Quang Liem; Liang Li; Reiss, Peter
February 2010
Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p073102
Academic Journal
This letter reports on the comparative photoluminescence study of InP/ZnS quantum dots in the close-packed solid state and in colloidal solution. The steady-state photoluminescence spectrum of the close-packed InP/ZnS quantum dots peaks at a longer wavelength than that of the colloidal ones. Time-resolved photoluminescence shows that the close-packed quantum dots possess a shorter luminescence decay time and strongly increased spectral shift with the time delayed from the excitation moment in comparison with the colloidal ones. The observed behavior is discussed on the basis of energy transfer enabled by the short interparticle distance between the close-packed quantum dots.


Related Articles

  • Carrier dynamics in stacked InP/GaAs quantum dots. Veloso, A. B.; Nakaema, M. K. K.; de Godoy, M. P. F.; Lopes, J. M. J.; Iikawa, F.; Brasil, M. J. S. P.; Bortoleto, J. R. R.; Cotta, M. A.; Fichtner, P. F. P.; Morschbächer, M.; Madureira, J. R. // Applied Physics Letters;9/17/2007, Vol. 91 Issue 12, p121917 

    We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies...

  • Structural and optical properties of vertically aligned InP quantum dots. Zundel, M.K.; Specht, P. // Applied Physics Letters;11/17/1997, Vol. 71 Issue 20, p2972 

    Examines the influence of stacking of indium phosphide quantum dot layers on the photoluminescence energy, intensity and linewidth. Preparation of the layers by molecular beam epitaxy; Use of transmission electron microscopy; Effect of the reduction of dot layer distance on material homogeneity.

  • Optical Orientation Of Electron And Nuclear Spins In Negatively Charged InP QDs. Verbin, S. Yu.; Gerlovin, I. Ya.; Ignatev, I. V.; Masumoto, Y. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1417 

    Light-induced spin orientation in negatively charged InP quantum dots is shown experimentally to be conserved for about 1 ms. © 2005 American Institute of Physics

  • Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates. Jahan, Nahid A.; Hermannstädter, Claus; Huh, Jae-Hoon; Sasakura, Hirotaka; Rotter, Thomas J.; Ahirwar, Pankaj; Balakrishnan, Ganesh; Akahane, Kouichi; Sasaki, Masahide; Kumano, Hidekazu; Suemune, Ikuo // Journal of Applied Physics;Jan2013, Vol. 113 Issue 3, p033506 

    InAs quantum dots (QDs) grown on InP substrates can be used as light emitters in the telecommunication bands. In this paper, we present optical characterization of high-density circular quantum dots (QDots) grown on InP(311)B substrates and elongated dots (QDashes) grown on InP(001) substrates....

  • A theoretical and experimental study of λ>2 μm luminescence of quantum dots on InP substrate. Doré, F.; Even, J.; Cornet, C.; Schliwa, A.; Bertru, N.; Dehaese, O.; Alghoraibi, I.; Folliot, H.; Piron, R.; Le Corre, A.; Loualiche, S. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p889 

    Theoretical and experimental studies of the electronic properties of InAs(Sb) quantum dots (QDs) grown by molecular beam epitaxy (MBE) on InP(100) substrate are presented. Eight-band k·p calculations including strain and piezoelectric effects are performed on InAs/InP(100) quantum dot (QD)...

  • Theory and experiment of InAs/InP quantum dots: from calculations to laser emission. Cornet, C.; Hayne, M.; Schliwa, A.; Doré, F.; Labbé, C.; Folliot, H.; Even, J.; Bimberg, D.; Moshchalkov, V. V.; Loualiche, S. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p779 

    We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k·p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. It is then demonstrated that...

  • White light-emitting nanocomposites based on an oxadiazole–carbazole copolymer (POC) and InP/ZnS quantum dots. Bruno, Annalisa; Borriello, Carmela; Di Luccio, Tiziana; Nenna, Giuseppe; Sessa, Lucia; Concilio, Simona; Haque, Saif A.; Minarini, Carla // Journal of Nanoparticle Research;Nov2013, Vol. 15 Issue 11, p1 

    In this work, we studied energetic and optical proprieties of a polyester-containing oxadiazole and carbazole units that we will indicate as POC. This polymer is characterized by high photoluminescence activity in the blue region of the visible spectrum, making it suitable for the development of...

  • Colloidal quantum dots InP@ZnS: Inhomogeneous broadening and distribution of luminescence lifetimes. Brichkin, S.; Spirin, M.; Tovstun, S.; Gak, V.; Mart'yanova, E.; Razumov, V. // High Energy Chemistry;Sep2016, Vol. 50 Issue 5, p395 

    Indium phosphide colloidal quantum dots with a zinc sulfide shell, an average core diameter of 3 nm, a luminescence peak position of 600 nm, and a luminescence quantum yield up to 50% have been synthesized. By analyzing the stationary absorption and luminescence spectra in terms of the...

  • Optical Properties of InAs Quantum Dots Grown on Variable Stoichiometry InxGa1-xAs and In0.53AlyGa0.43-yAs Layers. Mendoza-Alvarez, Julio G.; Pires, Mauricio P.; Landi, Sandra M.; Souza, Patricia L.; Villas-Boas, Jose M.; Studart, Nelson // AIP Conference Proceedings;2007, Vol. 885 Issue 1, p240 

    The use of InP substrates has made possible to obtain InAs QD layers with room temperature photoluminescence (PL) in the range 2.0–2.2 μm. This last result was possible because of the shift to lower energies of the InAs QD energy bandgap due to the reduction in the strain field between...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics